Datasheet Summary
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Features
- Single Voltage Read/Write Operation: 2.65V to 3.6V
- Access Time
- 70 ns
- Sector Erase Architecture
- Sixty-three 32K Word (64K Bytes) Sectors with Individual Write Lockout
- Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout Fast Word Program Time
- 10 µs Fast Sector Erase Time
- 100 ms Suspend/Resume Feature for Erase and Program
- Supports Reading and Programming from Any Sector by Suspending Erase of a Different Sector
- Supports Reading Any Byte/Word in the Non-suspending Sectors by Suspending Programming of Any Other Byte/Word Low-power Operation
- 10 mA Active
- 15 µA Standby Data Polling, Toggle Bit, Ready/Busy for End of Program...
