AT49BV642DT Key Features
- Single Voltage Operation Read/Write: 2.65V
- 3.6V 2.7V
- 3.6V Read/Write Access Time
- 70 ns Sector Erase Architecture
- One Hundred Twenty-seven 32K Word Main Sectors with Individual Write Lockout
- Eight 4K Word Sectors with Individual Write Lockout Fast Word Program Time
- 10 µs Typical Sector Erase Time: 32K Word Sectors
- 500 ms; 4K Word Sectors
- 100 ms Suspend/Resume Feature for Erase and Program
- Supports Reading and Programming Data from Any Sector by Suspending Erase of a Different Sector