Datasheet Summary
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Features
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Single Supply for Read and Write: 4.5 to 5.5V Fast Read Access Time
- 55 ns Internal Program Control and Timer Flexible Sector Architecture
- One 16K Bytes Boot Sector with Programming Lockout
- Two 8K Bytes Parameter Sectors
- Eight Main Memory Sectors (One 32K Bytes, Seven 64K Bytes) Fast Erase Cycle Time
- 8 Seconds Byte-by-Byte Programming
- 12 µs/Byte Typical Hardware Data Protection DATA Polling or Toggle Bit for End of Program Detection Low Power Dissipation
- 20 mA Active Current
- 25 µA CMOS Standby Current Minimum 100,000 Write Cycles
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4-megabit (512K x 8) 5-volt Only Flash Memory AT49F040B
1. Description
The AT49F040B is a...
