AT52BC3221A Key Features
- 32-Mbit Flash and 4-Mbit/8-Mbit PSRAM
- Single 66-ball (8 mm x 10 mm x 1.2 mm) CBGA Package
- 2.7V to 3.3V Operating Voltage
- 70 ns Sector Erase Architecture
- Sixty-three 32K Word Sectors with Individual Write Lockout
- Eight 4K Word Sectors with Individual Write Lockout Fast Word Program Time
- 15 µs Suspend/Resume Feature for Erase and Program
- Supports Reading and Programming from Any Sector by Suspending Erase of a Different Sector
- Supports Reading Any Word by Suspending Programming of Any Other Word Low-power Operation
- 12 mA Active