FQF8N60 Overview
HIGH VOLTAGE N-Channel MOSFET FQ F8 N60 600V N-Channel MOSFET.
FQF8N60 Key Features
- Low Intrinsic Capacitances
- Excellent Switching Characteristics
- Extended Safe Operating Area
- Unrivalled Gate Charge :Qg= 40nC (Typ.)
- BVDSS=600V,ID=7.5A
- RDS(on) :1.32 Ω (Max) @VG=10V
- 100% Avalanche Tested