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DN030S Description

Semiconductor DN030S NPN Silicon Transistor.

DN030S Key Features

  • Extremely low collector-to-emitter saturation voltage ( VCE(SAT)= 0.1V Typ. @IC /IB =100mA/10mA)
  • Suitable for low voltage large current drivers
  • plementary pair with DP030S
  • Switching Application