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SMK1060PS Datasheet Preview

SMK1060PS Datasheet

Advanced N-Ch Power MOSFET

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Semiconductor
SWITCHING REGULATOR APPLICATIONS
Features
High Voltage: BVDSS=600V(Min.)
Low Crss : Crss=18pF(Typ.)
Low gate charge : Qg=35nc(Typ.)
Low RDS(on) :RDS(on)=0.75Ω(Max.)
Ordering Information
Type No.
Marking
SMK1060PS
SMK1060
Package Code
TO-220AB-3L
SMK1060PS
Advanced N-Ch Power MOSFET
PIN Connection
D
G
GDS
TO-220AB-3L
S
Absolute maximum ratings (TC=25°C unless otherwise noted)
Characteristic
Symbol
Drain-source voltage
VDSS
Gate-source voltage
Drain current (DC)*
VGSS
(Tc=25)
ID (Tc=100)
Drain current (Pulsed)*
IDM
Drain power dissipation
Avalanche current (Single)
Single pulsed avalanche energy
Avalanche current (Repetitive)
Repetitive avalanche energy
PD
IAS
EAS
IAR
EAR
Junction temperature
TJ
Storage temperature range
Tstg
* Limited by maximum junction temperature
Rating
600
±30
10
6.32
40
120
10
490
10
11.6
150
-55~150
Characteristic
Thermal
resistance
Junction-case
Junction-ambient
Symbol
Rth(J-C)
Rth(J-a)
Typ.
-
-
Max
1.04
62.5
Unit
V
V
A
A
A
W
A
mJ
A
mJ
°C
Unit
/W
KSD-T0O018-000
1




AUK

SMK1060PS Datasheet Preview

SMK1060PS Datasheet

Advanced N-Ch Power MOSFET

No Preview Available !

SMK1060PS
Electrical Characteristics (TC=25°C unless otherwise noted)
Characteristic
Symbol
Test Condition
Drain-source breakdown voltage
Gate threshold voltage
BVDSS
VGS(th)
ID=250μA, VGS=0
ID=250μA, VDS= VGS
Drain-source cut-off current
IDSS
VDS=600V, VGS=0V
Gate leakage current
IGSS
VDS=0V, VGS=±30V
Drain-source on-resistance
RDS(ON) VGS=10V, ID=5.0A
Forward transfer conductance
gfs VDS=10V, ID=5.0A
Input capacitance
Output capacitance
Ciss
Coss
VGS=0V, VDS=25V
f=1MHz
Reverse transfer capacitance
Crss
Turn-on delay time
Rise time
Turn-off delay time
td(on)
tr
td(off)
VDD=300V, ID=10A
RG=25
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
tf
Qg VDS=480V, VGS=10V
Qgs ID=10A
Qgd
Min.
600
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
0.60
8.0
2000
160
18
23
69
144
77
35
9.0
10
Max.
-
4.0
1
±100
0.75
-
2350
215
-
-
-
-
-
57
-
-
Unit
V
V
μA
nA
Ω
S
pF
ns
nC
Source-Drain Diode Ratings and Characteristics (TC=25°C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min Typ Max
Source current (DC)
Source current (Pulsed)
Forward voltage
IS Integral reverse diode
ISM in the MOSFET
VSD VGS=0V, IS=10A
- - 10
- - 40
- - 1.4
Reverse recovery time
Reverse recovery charge
trr Is=10A, VGS=0,
Qrr diS/dt=100A/ us
- 470
-6
-
-
Unit
A
V
ns
uC
Note ;
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
L=10mH, IAS=9.5A, VDD=50V, RG=25, Starting TJ = 25
Pulse Test : Pulse Width300us, Duty cycle2%
Essentially independent of operating temperature
KSD-T0O018-000
2


Part Number SMK1060PS
Description Advanced N-Ch Power MOSFET
Maker AUK
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SMK1060PS Datasheet PDF






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