SMN0665FD - Advanced N-Ch Power MOSFET

Datasheet Details

Drain-Source breakdown voltage: BVDSS=650V (Min. ).
Low gate charge: Qg=14nC (Typ. ).
Low drain-source On resistance: RDS(on)=1.8Ω.
100% avalanche tested.
RoHS compliant device Ordering Information Part Number Marking Package SMN0665FD SMN0665 TO-220F-3L GDS TO-220F-3L Marking Information AUAKUK GFYMDD SMNΔ0Y6M6D5 D SDB20D45 Column 1: Manufacturer Column 2: Production Information e. g. ) GFYMDD -. G: Option Code (H: Halogen Free) -. F: Factory.

📁 SMN0665FD Similar Datasheet

SMN0665FL - Advanced N-Ch Power MOSFET (KODENSHI KOREA)
SMN18T50FD - Advanced N-Ch Power MOSFET (KODENSHI KOREA)
SMNZ - Ultra High Precision Z-Foil Surface Mount 4 Resistor Network (Vishay)

Other Datasheets by AUK

Published: Jan 13, 2017 |