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SMN630LD - Logic Level N-Ch Power MOSFET

Key Features

  • Drain-Source breakdown voltage: BVDSS=200V (Min. ).
  • Low gate charge: Qg=12nC (Typ. ).
  • Low drain-source On-Resistance: RDS(on)=0.34Ω (Typ. ).
  • 100% avalanche tested.
  • RoHS compliant device Ordering Information Part Number Marking Package SMN630LD SMN630L TO-252 D G S TO-252 Marking Information SMN 630L YWW Column 1, 2: Device Code Column 3: Production Information e. g. ) YWW -. YWW: Date Code (year, week) Absolute maximum ratings (TC=25C unless otherwise noted).

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMN630LD Logic Level N-Ch Power MOSFET 200V LOGIC N-Channel MOSFET Features  Drain-Source breakdown voltage: BVDSS=200V (Min.)  Low gate charge: Qg=12nC (Typ.)  Low drain-source On-Resistance: RDS(on)=0.34Ω (Typ.)  100% avalanche tested  RoHS compliant device Ordering Information Part Number Marking Package SMN630LD SMN630L TO-252 D G S TO-252 Marking Information SMN 630L YWW Column 1, 2: Device Code Column 3: Production Information e.g.) YWW -.