SMN630LD Key Features
- Drain-Source breakdown voltage: BVDSS=200V (Min.)
- Low gate charge: Qg=12nC (Typ.)
- Low drain-source On-Resistance: RDS(on)=0.34Ω (Typ.)
- 100% avalanche tested
- RoHS pliant device
- YWW: Date Code (year, week)
| Part Number | Description |
|---|---|
| SMN01L20Q | Logic Level N-Ch Power MOSFET |
| SMN01Z30Q | Advanced N-Ch Power MOSFET |
| SMN0250F | Advanced N-Ch Power MOSFET |
| SMN03T80F | Advanced N-Ch Power MOSFET |
| SMN03T80IS | Advanced N-Ch Power MOSFET |