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SMNY2Z30 - Advanced N-Ch Power MOSFET

Key Features

  • High voltage: BVDDS=300V (Min. ).
  • Low gate charge: Qg=2.9nC (Typ. ).
  • Low drain-source On resistance: RDS(on)=8Ω (Max. ).
  • Built-in protection zener diode.
  • RoHS compliant device Ordering Information Part Number Marking Package SMNY2Z30 SMNY2Z30 TO-92 GDS TO-92 Marking Information SMNY 2Z30 YWW Column 1, 2: Device Code Column 3: Production Information e. g. ) YWW -. YWW: Date Code (year, week) Absolute maximum ratings (Ta=25C unless otherwise noted) Characteristic.

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Other Datasheets by AUK (Kodenshi AUK Group)

Part Number Description
SMN01L20Q Logic Level N-Ch Power MOSFET
SMN01Z30Q Advanced N-Ch Power MOSFET
SMN0250F Advanced N-Ch Power MOSFET
SMN03T80F Advanced N-Ch Power MOSFET
SMN03T80IS Advanced N-Ch Power MOSFET
SMN0470F Advanced N-Ch Power MOSFET
SMN04L20D Logic Level N-Ch Power MOSFET
SMN04L20IS Logic Level N-Ch Power MOSFET
SMN0665F Advanced N-Ch Power MOSFET
SMN0665FD Advanced N-Ch Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMNY2Z30 Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features  High voltage: BVDDS=300V (Min.)  Low gate charge: Qg=2.9nC (Typ.)  Low drain-source On resistance: RDS(on)=8Ω (Max.)  Built-in protection zener diode  RoHS compliant device Ordering Information Part Number Marking Package SMNY2Z30 SMNY2Z30 TO-92 GDS TO-92 Marking Information SMNY 2Z30 YWW Column 1, 2: Device Code Column 3: Production Information e.g.) YWW -.