SUF1002 - Dual N-ch Trench MOSFET

AUK (Kodenshi AUK Group)

Key Features

Low drain-source On-resistance: RDS(on)=24mΩ @VGS=10V, ID=2.9A.
Low gate charge: Qg=79.5nC (Typ. ).
High power and current handing capability.
Lead free product is acquired Ordering Information Part Number Marking Code Package SOP-8 Packaging SUF1002 SUF1002 SOP-8 Tape & Reel Marking and Pin Assignment SUF1002 YWW Column 1: Device Code Column 2: Production Information - YWW: Year & Week Code Absolute Maximum Ratings (Tamb=25℃, Unless otherwise noted) Characterist.

SUF1002 dual n-ch trench mosfet by AUK (Kodenshi AUK Group) - Datasheet Preview

Datasheet Details

Part number	SUF1002
Manufacturer	AUK (Kodenshi AUK Group)
File Size	349.86 KB
Description	Dual N-ch Trench MOSFET
Datasheet	SUF1002 Datasheet

Other Datasheets by AUK (Kodenshi AUK Group)

Part Number	Description
SUF3001	Dual P-ch Trench MOSFET
SUF520J	N-Channel Enhancement-Mode MOSFET
SUF620EF	P-Channel Enhancement-Mode MOSFET
SUF621EF	N-Channel Enhancement-Mode MOSFET
SUF622EF	N-Ch/P-Ch Enhancement-Mode MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SUF1002 Dual N-ch Trench MOSFET 30V, 5.8A N-channel Trench MOSFET Features  Low drain-source On-resistance: RDS(on)=24mΩ @VGS=10V, ID=2.9A  Low gate charge: Qg=79.5nC (Typ.