* Low drain-source On-resistance:
RDS(on)=24mΩ @VGS=10V, ID=2.9A * Low gate charge: Qg=79.5nC (Typ.) * High power and current handing capability
* Lead fr.
This website uses cookies or similar technologies, to enhance your browsing experience and provide personalized recommendations. By continuing to use our website, you agree to our Privacy Policy
Download