THN6301 - SiGe NPN Transistor

AUK

Description

Base Emitter Collector

Dimension 2.9ⅹ1.3, 1.2t 2.0ⅹ1.25, 1.0t 2.

s o Low Noise Figure NF = 1.1 dB at f = 1 GHz, VCE = 8 V, IC = 5 mA o High Power Gain MAG =18 dB at f = 1 GHz, VCE = 8 V, IC =15 mA o High Transition Frequency fT = 10 GHz at VCE = 8 V, IC = 15 mA THN6301 Series SiGe NPN Transistor SOT-523 Unit in mm.
hFE Classification Marking AA1 AA2 hFE 125 to 300 80 to 160.
Absolute Maximum Ratings Symbol Parameter VCBO Collector to Base Breakdown Voltage VCEO Collector to Emitter Breakdown Voltage VEBO Emitter to Base Breakdown.

Click to expand full text

Semiconductor □ Application LNA and wide band amplifier up to GHz range □ Features o Low Noise Figure NF = 1.

Published: Jan 30, 2017 |