Datasheet Summary
Semiconductor
Si RF LDMOS Transistor
SOT-89
Unit in mm
- Applications
- VHF and UHF wide band amplifier
- Features
- Power gain GP = 12.5 dB at VDS = 4.5 V, IDset = 200 mA, f = 470 MHz
- Output power POUT = 32 dBm at VDS = 4.5 V, IDset = 200 mA, f = 470 MHz
- Drain efficiency ηD = 60 % (typ.)
..
- Marking
Pin Configuration
1. Gate 2. Source
1 2 3
3. Drain 4. Source
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