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AUK
AUK

TMF8901F Datasheet Preview

TMF8901F Datasheet

Si RF LDMOS Transistor

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TMF8901F pdf
Semiconductor
TMF8901F
Si RF LDMOS Transistor
Applications
- VHF and UHF wide band amplifier
SOT-89
Unit in mm
Features
- Power gain
GP = 12.5 dB at VDS = 4.5 V, IDset = 200 mA, f = 470 MHz
- Output power
POUT = 32 dBm at VDS = 4.5 V, IDset = 200 mA, f = 470 MHz
- Drain efficiency
ηD = 60 % (typ.)
Marking
4
8901
123
www.DataSheet4U.com
4
Pin Configuration
1. Gate
2. Source
3. Drain
4. Source
Absolute Maximum Ratings (TA = 25 )
Param eter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Total Power Dissipation
Channel Temperature
Storage Temperature
Sym bol
VDS
VGS
ID
Ptot
Tch
Tstg
Ratings
13.0
4.0
1.2
3
150
-65 ~ 150
Unit
V
V
A
W



AUK
AUK

TMF8901F Datasheet Preview

TMF8901F Datasheet

Si RF LDMOS Transistor

No Preview Available !

TMF8901F pdf
Electrical Characteristics (TA = 25 )
Parameter
Gate to Source Leakage Current
Drain to Source Leakage Current
Threshold Voltage
Transconductance
Drain to Source Breakdown
Voltage
Drain to Source On-Voltage
Power Gain
Output Power
Operating Current
Drain Efficiency
Power Gain
Output Power
Operating Current
Drain Efficiency
Symbol
IGSS
IDSS
Vth
Gm
BVDSS
VDSon
GP
POUT
Iop
ηD
GP
POUT
Iop
ηD
Test Conditions
VGSS = 3.0 V
VDSS = 8.5 V, VGS = 0 V
VDS = 4.8 V, ID = 1
VDS = 4.8 V, ID = 400
IDSS = 10
VGS = 4 V, ID = 600
f = 470 MHz, PIN = 20 dBm
VDS = 4.5 V, IDset = 200
f = 470 MHz, PIN = 20 dBm
VDS = 4.5 V, IDset = 200
f = 470 MHz, PIN = 15 dBm
VDS = 4.5 V, IDset = 50
f = 470 MHz, PIN = 15 dBm
VDS = 4.5 V, IDset = 50
TMF8901F
Min. Typ. Max.
1
10
0.8 1.0 1.4
700
13
Unit
V
mS
V
0.4 V
12.5 dB
32 dBm
670 mA
60 %
14 dB
29 dBm
400 mA
44 %


Part Number TMF8901F
Description Si RF LDMOS Transistor
Maker AUK
Total Page 5 Pages
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TMF8901F pdf
TMF8901F Datasheet PDF
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