TMF8901F transistor equivalent, si rf ldmos transistor.
- Power gain GP = 12.5 dB at VDS = 4.5 V, IDset = 200 mA, f = 470 MHz - Output power POUT = 32 dBm at VDS = 4.5 V, IDset = 200 mA, f = 470 MHz - Drain efficiency ηD = 60 .
- VHF and UHF wide band amplifier
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□ Features
- Power gain GP = 12.5 dB at VDS = 4.5 V, IDset = 200 mA, f = 470 MHz -.
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