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AMMC-6120 Datasheet Preview

AMMC-6120 Datasheet

8-20 GHz Output x2 Active Frequency Multiplier

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AMMC-6120
8-20 GHz Output x2
Active Frequency Multiplier
Data Sheet
Chip Size: 1600 x 1000 µm (64 x 40 mils)
Chip Size Tolerance: ± 10 µm (± 0.4 mils)
Chip Thickness: 100 ± 10 µm (4 ± 0.4 mils)
Pad Dimensions: 120 x 80 µm (5x3 ± 0.4 mils)
Description
Avago Technologies' AMMC-6120 is an easy-to-use x2
active frequency multiplier MMIC designed for com-
mercial communication systems. Though capable of
doubling to 24 GHz with reduced fundamental suppres-
sion, the MMIC is designed to take a 4 to 10 GHz input 
and double it to 8 to 20 GHz. It has integrated output
amplifier, matching harmonic suppression, and bias
networks. The input/output are matched to 50 Ω 
and fully DC blocked. The MMIC is fabricated using
PHEMT technology. The backside of this die is both RF
and DC ground. This helps simplify the assembly process
and reduces assembly related performance variations
and costs. For improved reliability and moisture protec-
tion, the die is passivated at the active areas. This MMIC is
a cost effective alternative to bulky hybrid FET and diode
doublers that require high input drive power, have high
C.L. and poor fundamental suppression.
Features
  Input frequency range: 4-10 GHz
  Broad input power range: -11 to +5 dBm
  Output power: +14 dBm (Pin = +3 dBm)
  Fundamental Suppression of 25 dBc
  50 Ω input and output match
  Supply bias of -1.4 V, 5 V and 85 mA
Applications
  Microwave radio systems
  Satellite VSAT, DBS Up/Down Link
  LMDS & Pt-Pt mmW Long Haul
  Broadband Wireless Access 
(including 802.16 and 802.20 WiMax)
  WLL and MMDS loops
AMMC-6120 Absolute Maximum Ratings[1]
Symbol Parameters/Conditions
Units Min.
Vd Positive Drain Voltage
Vg Gate Supply Voltage
V
V -3.0
Id Drain Current
mA
Pin CW Input Power
dBm
Tch Operating Channel Temp. °C
Tstg Storage Case Temp.
°C -65
Tmax Maximum Assembly Temp. °C
(60 sec. max.)
Max.
7
0.5
120
15
+150
+150
+300 
Note:
1. Operation in excess of any one of these conditions may result in
permanent damage to this device.
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 0)
Refer to Avago Application Note A004R:
Electrostatic Discharge Damage and Control.




AVAGO

AMMC-6120 Datasheet Preview

AMMC-6120 Datasheet

8-20 GHz Output x2 Active Frequency Multiplier

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AMMC-6120 DC Specifications/Physical Properties[1]
Symbol
Parameters and Test Conditions
Units Min.
Typ. Max.
Idq
Vg
qch-b
Drain Supply Current (under any
mA 80
85 105 
RF power drive and temperature)
(Vdd = 5 V)
Gate Supply Operating Voltage
V -1.5 -1.4 -1.0
Thermal Resistance[2]
(Backside Temperature, Tb = 25°C)
°C/W
25
Notes:
1.  Ambient operational temperature TA = 25°C unless otherwise noted.
2.  Channel-to-backside Thermal Resistance (qch-b) = 26°C/W at Tchannel (Tc) = 34°C as measured using infrared microscopy. Thermal Resistance at
backside temperature (Tb) = 25°C calculated from measured data.
AMMC-6120 RF Specifications [3,4,5]
TA = 25°C, Vdd = 5 V, Vg=-1.4V, Id(Q) = 85 mA, Zo = 50 Ω
Symbol Parameters and Test Conditions
Units
Minimum
Typical
Maximum Sigma
Fin Input Frequency
GHz
4 to 10
Fout Output Frequency
GHz
8 to 20
Po Output Power[4]
dBm
10.5
14
0.6
Fo Fundamental Isolation
dBc 18
25
1.8 
(referenced to Po)
3Fo 3rd Harmonic Isolation
(referenced to Po)
dBc
25
2.5 
P-1dB
RLin
Input Power at 1dB Gain Compression
Input Return Loss[6]
dBm
dB
+1
-15
RLout Output Return Loss[6]
dB
-9
SSB Single Sideband Phase Noise
(100 KHz offset)
DBc/Hz
-135 
Notes:
3.  Small/Large -signal data measured in wafer form TA = 25°C.
4.  100% on-wafer RF test is done at Pin = +3 dBm, output frequency = 10, 16, and 20 GHz.
5.  Specifications are derived from measurements in a 50-W test environment. Aspects of the multiplier performance may be improved over a
more narrow bandwidth by application of additional matching.



Part Number AMMC-6120
Description 8-20 GHz Output x2 Active Frequency Multiplier
Maker AVAGO
Total Page 8 Pages
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