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ASML-5822 Datasheet Preview

ASML-5822 Datasheet

Schottky Assisted Low Power PIN Diode Limiter

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ASML-5822
Schottky Assisted Low Power PIN Diode Limiter
Data Sheet
Description
The ASML-5822 is specifically designed for low power
limiter applications, where it can be used to protect the
receiver system from being damaged by large input
signals, and allow the receiver system to function normally
with the absence of large signal. The Schottky enhanced
limiter will have a lower limiting threshold compared to
the more conventional self-biased PIN limiter. The PIN
diode is placed at the input, to protect the Schottky from
high RF power levels.
Pin Connections and Package Marking, SOT-323
PIN Diode
Schottky Diode
Features
Low Power Limiter with unique combination of PIN and
Schottky Diode
Low limiting threshold power (OP1dB : 2.85 dBm
@900MHz)
Semi integrated solution in Surface Mount SOT-323
Package
– design simplicity
– save board space
– reduce cost
PIN Diode features:
– Power Limiting /Circuit Protection
– Low Failure in Time (FIT) Rate[1]
Schottky Diode features:
– Low Turn-On Voltage
(As Low as 0.34 V at 1 mA)
– Low FIT (Failure in Time) Rate[1]
Note:
1. For more information see the Surface Mount PIN Reliability Data
Sheet.
F6?
Notes:
F6 = Device Code
? = Month code indicates the month of manufacture




AVAGO

ASML-5822 Datasheet Preview

ASML-5822 Datasheet

Schottky Assisted Low Power PIN Diode Limiter

No Preview Available !

Table 1. Absolute Maximum Rating [1] Tc = +25°C
Symbol
Parameter
Absolute Max.
Absolute Max.
Units
for PIN Diode
for Schottky DIode
IF Forward Current (1µs Pulse)
Amp
1
1
PIV Peak Inverse Voltage
V 50
15
TJ Junction Temperature
°C
150
TSTG Storage Temperature
°C
-65 to 150
θJC Thermal Resistance [2]
°C/W
500
Notes:
1. Operation in excess of anyone of these conditions may result in permanent damage to the device.
2. TC = 25°C, TC where is defined to be the temperature at the package pins where contacts is made to the circuit board.
Table 2. Electrical Specifications, Tc = +25°C, PIN diode
Symbol
Parameter and Test Condition
VBR Breakdown Voltage, IR ≤ 10µA
VF Forward Voltage, IF = 100mA
RS Typical Series Resistance, Freq = 100MHz & IF = 1mA
RS Typical Series Resistance, Freq = 100MHz & IF = 10mA
CT Typical Total Capacitance, Freq = 1MHz & VR = 0V
CT Typical Total Capacitance, Freq = 1MHz & VR = 20V
τ Carrier Lifetime @ IF =10mA & IR =6mA
Units Min.
Typ
Max.
V 50 60 –
V – 0.93 –
Ohm
1.2 –
Ohm
0.5 0.6
pF –
0.9 –
pF –
0.53 0.8
ns –
70 –
Table 3. Electrical Specifications, Tc = +25°C, Schottky diode
Symbol
Parameter and Test Condition
VBR Breakdown Voltage, IR ≤ 100µA
IR Reverse Leakage Current @ VBR = 1V
VF Forward Voltage, IF = 1mA
VF Forward Voltage, IF = 10mA
CT Typical Total Capacitance, Freq = 1MHz & VR = 0V
RD Typical Dynamic Resistance, IF =5mA
Units Min.
Typ
Max.
V 15 22 –
nA –
40 100
V – 0.32 0.34
V – 0.45 0.50
pF –
0.7 1.0
Ohm
12 –
2


Part Number ASML-5822
Description Schottky Assisted Low Power PIN Diode Limiter
Maker AVAGO
Total Page 6 Pages
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