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AT-32032 Datasheet Preview

AT-32032 Datasheet

High Performance NPN Silicon Bipolar Transistor

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AT-32032
Low Current, High Performance
NPN Silicon Bipolar Transistor
Data Sheet
Description
Avago’s AT-32032 is a high performance NPN bipolar
transistor that has been optimized for maximum ft at
low voltage operation, making it ideal for use in battery
powered applications in cellular/PCS and other wireless
markets. The AT-32032 uses the miniature 3 lead SOT-323
(SC-70) plastic package.
Optimized performance at 2.7 V makes this device ideal
for use in 900 MHz, 1.8 GHz, and 2.4 GHz systems. Typical
amplifier design at 900 MHz yields 1 dB noise figures with
15 dB associated gain at 2.7 V and 5 mA bias condition,
with noise performance being relatively insensitive to
input match. High gain capability at 1 V and 1 mA makes
this device a good fit for 900 MHz pager applications.
Moreover, voltage breakdown is high enough for use
at 5 V.
The AT-32032 belongs to Avago’s AT-3XXXX series bipolar
transistors. It exhibits excellent device uniformity, per-
formance and reliability as a result of ion-implantation,
self-alignment techniques, and gold metalization in the
fabrication process.
Features
High Performance Bipolar Transistor Optimized for Low
Current, Low Voltage Applications at 900 MHz, 1.8 GHz,
and 2.4 GHz
Performance at 2.7 V, 5 mA:
900 MHz: 1 dB NF, 15 dB GA
1800 MHz: 1.3 dB NF, 11 dB GA
2400 MHz: 1.4 dB NF, 7.5 dB G
Characterized for End-Of-Life Battery Use (2.7 V)
Miniature 3-lead SOT-323 (SC-70) Plastic Package
Lead-free
Applications
LNA, Oscillator, Driver Amplifier, Buffer Amplifier, and
Down Converter for Cellular and PCS Handsets and
Cordless Telephones
LNA, Oscillator, Mixer, and Gain Amplifier for Pagers
Power Amplifier and Oscillator for RF-ID Tag
LNA and Gain Amplifier for GPS
LNA for CATV Set-Top Box
3-Lead SC-70 (SOT-323)
Surface Mount Plastic Package
Pin Configuration
COLLECTOR
32
BASE EMITTER




AVAGO

AT-32032 Datasheet Preview

AT-32032 Datasheet

High Performance NPN Silicon Bipolar Transistor

No Preview Available !

AT-32032 Absolute Maximum Ratings
Symbol
VEBO
VCBO
VCEO
IC
PT
Tj
TSTG
Parameter
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation[2, 3]
Junction Temperature
Storage Temperature
Absolute
Units Maximum[1]
V 1.5
V 11
V 5.5
mA 40
mW 200
°C 150
°C -65 to 150
Thermal Resistance [2]:
qjc = 350°C/W
Notes:
1. Operation of this device above any one of
these parameters may cause permanent
damage.
2. Tmounting surface = 25°C.
3. Derate at 2.86 mW/°C for Tmounting surface
> 80°C.
Electrical Specifications, TA = 25°C
Symbol
Parameters and Test Conditions
Units Min. Typ. Max.
NF Noise Figure
VCE = 2.7 V, IC = 5 mA
f = 0.9 GHz
f = 1.8 GHz
dB
1.0 1.3
1.25
GA Associated Gain
VCE = 2.7 V, IC = 5 mA
f = 0.9 GHz
f = 1.8 GHz
dB
13.5 15.0
10.5
hFE Forward Current Transfer Ratio
VCE = 2.7 V, IC = 5 mA
– 70
300
ICBO Collector Cutoff Current
VCB = 3 V
μA
0.2
IEBO Emitter Cutoff Current
VEB = 1 V
μA
1.5
AT-32032 Characterization Information, TA = 25°C
Symbol
Parameters and Test Conditions
P1dB Power at 1 dB Gain Compression (opt tuning)
VCE = 2.7 V, IC = 20 mA
G1dB
Gain at 1 dB Gain Compression (opt tuning)
VCE = 2.7 V, IC = 20 mA
IP3
|S21|E2
Output Third Order Intercept Point (opt tuning)
VCE = 2.7 V, IC = 20 mA
Gain in 50 Ω System
VCE = 2.7 V, IC = 2 mA
f = 0.9 GHz
f = 0.9 GHz
f = 0.9 GHz
f = 0.9 GHz
Units
dBm
dB
dBm
dB
Typ.
13
15.5
23
11.5



Part Number AT-32032
Description High Performance NPN Silicon Bipolar Transistor
Maker AVAGO
Total Page 14 Pages
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