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HSCH-5310 - Beam Lead Schottky Diodes

This page provides the datasheet information for the HSCH-5310, a member of the HSCH-5314 Beam Lead Schottky Diodes family.

Datasheet Summary

Description

These beam lead diodes are constructed using a metalsemiconductor Schottky barrier junction.

Advanced epitaxial techniques and precise process control insure uniformity and repeatability of this planar passivated microwave semiconductor.

Features

  • Platinum tri-metal system High temperature stability.
  • Silicon nitride passivation Stable, reliable performance.
  • Low noise figure Guaranteed 7.5 dB at 26 GHz.
  • High uniformity Tightly controlled process insures uniform RF characteristics.
  • Rugged construction 4 grams minimum lead pull.
  • Low capacitance 0.10 pF max. at 0 V.
  • Polyimide scratch protection The basic medium barrier devices in this family are DC tested HSCH-5310 and -5312. Eq.

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Datasheet preview – HSCH-5310

Datasheet Details

Part number HSCH-5310
Manufacturer AVAGO
File Size 75.53 KB
Description Beam Lead Schottky Diodes
Datasheet download datasheet HSCH-5310 Datasheet
Additional preview pages of the HSCH-5310 datasheet.

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Full PDF Text Transcription

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HSCH-53xx Series Beam Lead Schottky Diodes for Mixers and Detectors (1-26 GHz) Data Sheet Description These beam lead diodes are constructed using a metalsemiconductor Schottky barrier junction. Advanced epitaxial techniques and precise process control insure uniformity and repeatability of this planar passivated microwave semiconductor. A nitride passivation layer provides immunity from contaminants which could otherwise lead to IR drift. The Avago beam lead process allows for large beam anchor pads for rugged construction (typical 6 gram pull strength) without degrading capacitance. Applications The beam lead diode is ideally suited for use in stripline or microstrip circuits.
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