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MGA-632P8 Datasheet Preview

MGA-632P8 Datasheet

High Linearity Active Bias Low Noise Amplifier

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MGA-632P8
Low Noise, High Linearity Active Bias Low Noise Amplifier
Data Sheet
Description
Avago Technologies’ MGA-632P8 is an economical, easy-
to-use GaAs MMIC Low Noise Amplifier (LNA) with active
bias. The LNA has low noise with excellent input return
loss and high linearity achieved through the use of Avago
Technologies’ proprietary 0.5um GaAs Enhancement-
mode pHEMT process. The LNA has an extra feature that
allows a designer to adjust supply current and gain ex-
ternally. Due to the high isolation between the input and
output, gain can be adjusted independently through
a resistor in series with a blocking capacitor from the
output pin to FB1 pin, without affecting the noise figure.
It is housed in a miniature 2.0 x 2.0 x 0.75mm3 8-pin Thin
Small Leadless Package (TSLP) package. The compact
footprint and low profile coupled with low noise, high
gain, excellent input return loss and high linearity make
the MGA-632P8 an ideal choice as an LNA for cellular in-
frastructure for GSM, CDMA, W-CDMA and TD-SCDMA ap-
plications.
It is designed for optimum use between 1.4GHz to
3GHz. For optimum performance at lower frequency
from 400MHz to 1.5GHz, the MGA-631P8 is recommend-
ed. Both MGA-631P8 and MGA-632P8 share the same
package and pinout.
Pin Configuration and Package Marking
2.0 x 2.0 x 0.75 mm3 8-lead TSLP
Features
Low noise figure
Good input return loss
High linearity performance
High Isolation
Externally adjustable supply current, 40-80mA
Externally adjustable gain, 15-20dB
GaAs E-pHEMT Technology[1]
Low cost small package size: 2.0x2.0x0.75 mm3
Excellent uniformity in product specifications
Specifications
1.95GHz; 4V, 60mA (typ)
17.6 dB Gain
0.62 dB Noise Figure
-22.7 dB S11
-40.5 dB S12
34.8 dBm Output IP3
19.2 dBm Output Power at 1dB gain compression
Applications
Low noise amplifier for cellular infrastructure for GSM,
CDMA, W-CDMA and TD-SCDMA.
Other ultra low noise applications.
Note:
[1] Enhancement mode technology employs positive Vgs, thereby
eliminating the need of negative gate voltage associated with
conventional depletion mode devices.
Top View
Note:
Package marking provides
orientation and identification
“G2” is Device Code
“X” is month code
Bottom View
Note:
Pin 1 : not used Pin 5 : FB1
Pin 2 : RFin
Pin 6 : not used
Pin 3 : RF ground Pin 7 : RFout
Pin 4 : Vbias
Pin 8 : Gnd
Attention: Observe precautions for handling
electrostatic sensitive devices.
ESD Machine Model = 50 V
ESD Human Body Model = 200 V
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and
Control.





AVAGO

MGA-632P8 Datasheet Preview

MGA-632P8 Datasheet

High Linearity Active Bias Low Noise Amplifier

No Preview Available !

MGA-632P8 Absolute Maximum Rating [i]
Symbol
Vd
Vbias
Pin,max
Pdiss
Tj
TSTG
Parameter
Device Supply Voltage
Control Voltage
CW RF Input Power (Vd = 4.0, Vbias=2.2V)
Total Power Dissipation [iii]
Junction Temperature
Storage Temperature
Units Absolute Max.
V 5.5
V 3.5
dBm 13
W 0.55
°C 150
°C -65 to 150
Thermal Resistance [ii] (Vd = 4.0V, Vbias=2.2V), θjc = 47 °C/W
Notes:
i. Operation of this device in excess of any of these limits may cause permanent damage.
ii. Thermal resistance measured using Infra-Red Microscopy Technique.
iii. Board temperature TB is 25 °C. Derate 21.2mW/ °C for TB>124 °C.
Product Consistency Distribution Charts[2]
Process Capability for Gain
240 LSL = 16.0, Nominal = 17.65, USL = 19.0
200 CPK Lower = 2.78
160 CPK Upper = 2.47
120 Std Dev = 0.19
80
40
0
16 16.5 17 17.5 18 18.5 19
Gain (dB)
Figure 1. Gain distribution at 60mA
Process Capability for Vbias
400 LSL = 1.7, Nominal = 2.25, USL = 2.7
300 CPK Lower = 6.13
CPK Upper = 4.96
200 Std Dev = 0.03
Process Capability for NF
240 Nominal = 0.62, USL = 1.0
200 CPK = 5.06
160
Std Dev = 0.025
120
80
40
0
0.3 0.4 0.5 0.6 0.7 0.8 0.9
NF (dB)
Figure 2. NF distribution at 60mA
1
100
0
1.7 1.9 2.1 2.3 2.5 2.7 2.9
Vbias (V)
Figure 3. Vbias distribution at 60mA
[2] Distribution data sample size is 500 samples taken from 3 different wafer lots. Future wafer allocated to this product may have nominal values
anywhere between the upper and lower limits. Circuit losses have been de-embedded from actual measurements.



Part Number MGA-632P8
Description High Linearity Active Bias Low Noise Amplifier
Maker AVAGO
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