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VMMK-2103 Datasheet Preview

VMMK-2103 Datasheet

E-pHEMT Amplifier

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VMMK-2103
0.5 to 6 GHz Bypass E-pHEMT LNA in Wafer Level Package
Data Sheet
Description
Avago’s VMMK-2103 is an easy-to-use GaAs MMIC bypass
LNA that offers good noise figure and flat gain from 0.5 to
6 GHz in a miniaturized wafer-level package (WLP). The
bias circuit incorporates a power down feature which is
accessed from the input port. This device contains an in-
tegrated bypass switch which engages when the amplifier
is in shut down mode, resulting in an improvement in
the input compression point while consuming minimal
current.
The input and output are matched to 50 Ω (better than 2:1
SWR) across the entire bandwidth; no external matching
is needed. This amplifier is fabricated with enhancement
E-pHEMT technology and industry leading wafer level
package. The WLP leadless package is small and ultra thin
yet can be handled and placed with standard 0402 pick
and place assembly.
WLP 0402, 1mm x 0.5mm x 0.25 mm
CY
Pin Connections (Top View)
Input
/ Vc
CY
Output
/ Vdd
Features
1 x 0.5 mm Surface Mount Package
Ultrathin (0.25mm)
LNA Bypass function
5V Supply
RoHS6 + Halogen Free
Specifications (at 3GHz, Vd = Vc = 5V, 23mA Typ.)
Noise Figure: 2.1dB typical
Loss in Bypass Mode: 2.3dB
Associated Gain: 14dB
Input IP3 in Gain Mode: +8dBm
Input IP3 in Bypass Mode: +21 dBm
Input P1dB in Gain Mode: 0dBm
Input P1dB in Bypass Mode: +17dBm
Applications
Low Noise and Driver for Cellular/PCS and WCDMA
Base Stations
2.4 GHz, 3.5GHz, 5-6GHz WLAN and WiMax notebook
computer, access point and mobile wireless applications
802.16 & 802.20 BWA systems
WLL and MMDS Transceivers
Radar, radio and ECM Systems
Input
/ Vc
Amp
Output
/ Vdd
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model =50V
ESD Human Body Model =125V
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.
Note:
“C” = Device Code
“Y” = Month Code




AVAGO

VMMK-2103 Datasheet Preview

VMMK-2103 Datasheet

E-pHEMT Amplifier

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Table 1. Absolute Maximum Ratings [1]
Sym Parameters/Condition
Unit
Vd Supply Voltage (RF Output) [2]
V
Vc Bypass Control Voltage
V
Id Device Current [2]
mA
Pin, max
CW RF Input Power (RF Input) [3]
dBm
Pdiss Total Power Dissipation
mW
Tch Max channel temperature
°C
Θjc Thermal Resistance [4]
°C/W
Notes
1. Operation in excess of any of these conditions may result in permanent damage to this device.
2. Bias is assumed DC quiescent conditions
3. With the DC (typical bias in both modes) and RF applied to the device at board temperature Tb = 25°C
4. Thermal resistance is measured from junction to board using IR method
Absolute Max
8
6
40
+20
320
150
110
Table 2. DC and RF Specifications
TA= 25°C, Frequency = 3 GHz, Vd = 5V, Vc=5V, Zin=Zout=50(unless otherwise specified)
Sym
Parameters/Condition
Unit
Minimum
Typ.
Id Device Current
mA 16
23
Id_leakage [6]
Current in Bypass Mode
mA
0.6
NF[1]
Noise Figure
dB –
2.1
Ga [1]
Associated Gain
dB 12
14
Ga_Bypass [1,6]
Associated Gain in Bypass Mode
dB
-4.1
-2.3
IIP3_Gain [2,3]
Input IP3 in Gain Mode
dBm
8
IIP3_Bypass[ 2,4,6]
Input IP3 in Bypass Mode
dBm
21
IP1dB_Gain [2]
Input P1dB in Gain Mode
dBm
0
IP1dB_Bypass [2,6]
Input P-1dB in Bypass Mode
17
IRL [2]
Input Return Loss
dB –
-11
ORL [2]
Output Return Loss
dB –
-13
ts [5] Switching Time
µs
0.1
Notes:
1. Measure data obtained using 300um G-S production wafer probe
2. Measure data obtained using 300um G-S-G PCB probe on substrate
3. IIP3 test condition: F1 = 3.0GHz, F2 = 3.01GHz, Pin = -10dBm in Gain Mode for typical performance during characterization
4. IIP3 test condition: F1 = 3.0GHz, F2 = 3.01GHz, Pin = 0dBm in Bypass Mode for typical performance during characterization
5. Switching time measured using test board (Figure 20)
6. Bypass Mode Bias Voltages are Vd = 5V, Vc = 0V
Maximum
30
1.5
2.7
16
2


Part Number VMMK-2103
Description E-pHEMT Amplifier
Maker AVAGO
Total Page 12 Pages
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