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VMMK-2303 Datasheet Preview

VMMK-2303 Datasheet

0.5 to 6 GHz 1.8 V E-pHEMT Shutdown LNA

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VMMK-2303
0.5 to 6 GHz 1.8 V E-pHEMT Shutdown LNA in Wafer Level Package
Data Sheet
Description
Avago’sVMMK-2303 is an easy-to-use GaAs MMIC amplifier
that offers excellent noise figure and flat gain from 0.5
to 6 GHz in a miniaturized wafer level package (WLP). It
operates from 1.8V CMOS supply or 3.3V battery supply.
The bias circuit has incorporated a power down feature
which is accessed from the input port.
The input and output are matched to 50 (better than 2:1
SWR) across the entire bandwidth; no external matching
is needed. This amplifier is fabricated with enhancement
E-pHEMT technology and industry leading revolutionary
wafer level package. The wafer level package is small and
ultra thin yet can be handled and placed with standard
0402 pick and place assembly.
WLP 0402, 1mm x 0.5mm x 0.25 mm
EY
Pin Connections (Top View)
Input
/ Vc
EY
Output
/ Vdd
Features
 1 x 0.5 mm Surface Mount Package
 Ultrathin (0.25mm)
 Power down function
 1.8V Supply
 50Ohm Input and Output Match
 RoHs6 + Halogen Free
Specifications (3GHz, 1.8V, 21mA Typ.)
 Noise Figure: 2.0dB typical
 Associated Gain: 14dB
 Output IP3: +22dBm
 Output P1dB: +9dBm
Applications
 Low Noise and Driver for Cellular/PCS and WCDMA
Base Stations
 2.4 GHz, 3.5GHz, 5-6GHz WLAN and WiMax notebook
computer, access point and mobile wireless
applications
 802.16 & 802.20 BWA systems
 WLL and MMDS Transceivers
 Radar, radio and ECM systems
Input
/ Vc
Amp
Note:
“E” = Device Code
“Y” = Month Code
Output
/ Vdd
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 50V
ESD Human Body Model = 125V
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.




AVAGO

VMMK-2303 Datasheet Preview

VMMK-2303 Datasheet

0.5 to 6 GHz 1.8 V E-pHEMT Shutdown LNA

No Preview Available !

Table 1. Absolute Maximum Ratings [1]
Sym Parameters/Condition
Unit
Vd Supply Voltage (RF Output) [2]
V
Vc Power Down Control Voltage
V
Id Device Current [2]
mA
Pin, max
CW RF Input Power (RF Input) [3]
dBm
Pdiss Total Power Dissipation
mW
Tch Max channel temperature
°C
jc Thermal Resistance [4]
°C/W
Notes
1. Operation in excess of any of these conditions may result in permanent damage to this device.
2. Bias is assumed DC quiescent conditions
3. With the DC (typical bias) and RF applied to the device at board temperature Tb = 25°C
4. Thermal resistance is measured from junction to board using IR method
Absolute Max
5
3
60
+13
300
150
140
Table 2. DC and RF Specifications
TA = 25°C, Frequency = 3 GHz, Vd = 1.8V, Vc = 1.8V, Zin = Zout = 50(unless otherwise specified)
Sym
Parameters/Condition
Unit
Id Device Current
mA
Id_leakage
Current in Shut Down Mode
A
NF [1]
Noise Figure
dB
Ga [1]
Associated Gain
dB
OIP3 [2,3]
Output 3rd Order Intercept
dBm
Output P-1dB [2]
Output Power at 1dB
Gain Compression
dBm
IRL [2]
Input Return Loss
dB
ORL [2]
Output Return Loss
dB
Notes:
1. Measure data obtained using 300um G-S probe on production wafers
2. Measure data obtained using 300um G-S-G probe on PCB substrate
3. OIP3 test condition: F1=3.0GHz, F2=3.01GHz, Pin=-20dBm
Minimum
15
12
Typ.
21
0.03
2
14
+22
+9
-13
-19
Maximum
28
20
2.6
16
2


Part Number VMMK-2303
Description 0.5 to 6 GHz 1.8 V E-pHEMT Shutdown LNA
Maker AVAGO
Total Page 11 Pages
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