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VMMK-3803 Datasheet Preview

VMMK-3803 Datasheet

3 - 11 GHz UWB Low Noise Amplifier

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VMMK-3803
3 - 11 GHz UWB Low Noise Amplifier in SMT Package
Data Sheet
Description
The VMMK-3803 is a small and easy-to-use, broadband,
low noise amplifier operating in various frequency bands
from 3 to 11 GHz with typical noise figure of 1.5 dB. It is
housed in the Avago Technologies’ industry-leading and
revolutionary sub-miniature chip scale package (GaAsCap
wafer scale leadless package) which is small and ultra thin
yet can be handled and placed with standard 0402 pick
and place assembly equipment. The VMMK-3803 provides
a typical gain of 20 dB with good linearity of 0.9 dBm
typical IIP3 and input and output return losses and can be
operated from 3 to 5 V power supply. It is fabricated using
Avago Technologies unique 0.25 μm E-mode PHEMT
technology which eliminates the need for negative gate
biasing voltage.
WLP0402, 1 mm x 0.5 mm x 0.25 mm
OY
Pin Connections (Top View)
Features
1 x 0.5 mm surface mount package
Ultrathin (0.25 mm)
Wide frequency range
Self-Biasing: 3 to 5 V
In and output match: 50 ohm
Specifications
(6 GHz, Vdd = 3 V, Vpd = 3 V, Zin = Zout = 50 )
Low noise figure: 1.5 dB typ.
Small signal gain: 20 dB typ.
Output Power at 1dB compression = 7 dBm
Applications
3.1-10.6 GHz UWB LNA
3.5 and 5-6 GHz WLAN and WiMax
10.5 GHz PMP
802.16 & 802.20 BWA systems
Radar and ECM systems
Generic IF amplifier
Input OY
Output/Vdd
Input Amp
Output/Vdd
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 60 V
ESD Human Body Model = 200 V
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.
Note:
“O” = Device Code
“Y” = Month Code




AVAGO

VMMK-3803 Datasheet Preview

VMMK-3803 Datasheet

3 - 11 GHz UWB Low Noise Amplifier

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Electrical Specifications
Table 1. Absolute Maximum Rating [1]
Symbol
Parameters/Condition
Unit Absolute Max
Vdd Supply Voltage (RF Output)
V7
Vpd Power Down Voltage
V7
Idd [2]
Supply Current
mA 45
Pin, max [3]
Pdiss
Tch
CW RF Input Power (RF Input)
Total Power Dissipation
Max Channel Temperature
dBm 15
mW 315
°C +150
θjc [4]
Thermal Resistance
°C/W
90.6
Notes
1. Operation of this device above any one of these parameters may cause permanent damage
2. Bias is assumed DC quiescent conditions
3. With the DC (typical bias) and RF applied to the device at board temperature Tb = 25° C
4. Thermal resistance is measured from junction to board using IR method
Table 2. DC and RF Specifications [1]
TA = 25° C, Zin = Zout = 50 , Freq = 6 GHz, Vdd = 3 V, Vpd = 3 V (unless otherwise specified)
Symbol
Parameters/Condition
Unit Minimum
Idd [2]
Supply Current
mA 14
Idd_Off [2]
Leakage Current (Vpd = 0 V)
mA
Ga [2,3]
Gain
dB 17
NF [2,3]
Noise Figure
dB
S11 [4]
Input Return Loss
dB
S22 [4]
Output Return Loss
dB
IIP3 [4,5]
Input 3rd Order Intercept Point
dBm
P-1dB [4]
Output Power at 1dB Compression
dBm
Notes
1. Losses of the test system have been de-embedded from final data
2. Measured data obtained from wafer-probing using a G-S, S-G pyramid probe
3. Ga and NF obtained from Noise Figure Analyzer
4. S-parameters, P1dB, and IIP3 data obtained using 300 mm G-S-G probing on PCB substrate
5. IIP3 test condition: Center frequency = 6 GHz, 2 tone offset = 10 MHz, Pin = -20 dBm
Typical
20
0.1
20
1.5
15
9
0.9
7
Maximum
26
23
1.9
2


Part Number VMMK-3803
Description 3 - 11 GHz UWB Low Noise Amplifier
Maker AVAGO
Total Page 9 Pages
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