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AXElite

AM2302 Datasheet Preview

AM2302 Datasheet

N-Channel Enhancement Mode MOSFET

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AM2302
N-Channel Enhancement Mode MOSFET
Features
20V/3A,
R=
DS(ON)
50m(Typ.)
@
V=
GS
4.5V
RDS(ON)= 65m(Typ.) @ VGS= 2.5V
RDS(ON)= 120m(Typ.) @ VGS= 1.8V
Super High Dense Cell Design
Reliable and Rugged
Lead Free and Green Devices Available
(RoHS Compliant)
Pin Description
Top View
D
GS
SOT-23
D
Applications
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
Ordering and Marking Information
G
S
N-Channel MOSFET
AM2302
Packing
Package
Package
R : SOT23-3L
Packing
Blank : Tube
A : Taping
AM2302 : A2XXX
XXX - Date Code
Note: AXElite lead-free products contain molding compounds/die attach materials and 100% matte tin plate termina-
tion finish; which are fully compliant with RoHS. AXElite lead-free products meet or exceed the lead-free requirements
of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. AXElite defines “Green” to
mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).




AXElite

AM2302 Datasheet Preview

AM2302 Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

AM2302
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
VDSS
VGSS
ID*
IDM*
IS*
TJ
TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
300µs Pulsed Drain Current
Diode Continuous Forward Current
Maximum Junction Temperature
Storage Temperature Range
PD* Maximum Power Dissipation
RθJA* Thermal Resistance-Junction to Ambient
Note : *Surface Mounted on 1in2 pad area, t 10 Sec.
VGS=4.5V
TA=25°C
TA=100°C
Rating
20
±12
3
10
1
150
-55 to 150
0.83
0.3
150
Unit
V
A
A
°C
W
°C/W
Electrical Characteristics
(T
A
=
25°C
unless
otherwise
noted)
Symbol
Parameter
Test Conditions
STATIC CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON) a Drain-Source On-state Resistance
VSDa Diode Forward Voltage
GATE CHARGE CHARACTERISTICS b
VGS=0V, IDS=250µA
VDS=16V, VGS=0V
TJ=85°C
VDS=VGS, IDS=250µA
VGS=±10V, VDS=0V
VGS=4.5V, IDS=3A
VGS=2.5V, IDS=2A
VGS=1.8V, IDS=0.5A
ISD=1A, VGS=0V
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=10V, VGS=4.5V,
IDS=3A
AM2302
Unit
Min. Typ. Max.
20 - - V
- -1
µA
- - 30
0.5 0.7 1
V
- - ±10 µA
- 50 65
- 65 90 m
- 120 200
- 0.7 1.3 V
- 4.4 6
- 0.5 - nC
- 1.6 -
2
Axelite Confidential Materials, do not copy or distribute without written consent.
Rev.1.0 Aug.26, 2010


Part Number AM2302
Description N-Channel Enhancement Mode MOSFET
Maker AXElite
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AM2302 Datasheet PDF






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