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AXElite

AM3407 Datasheet Preview

AM3407 Datasheet

P-Channel Enhancement Mode MOSFET

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AM3407
P-Channel Enhancement Mode MOSFET
Features
-30V/-4.5A,
RDS(ON)=43m(typ.) @ VGS=10V
RDS(ON)=60m(typ.) @ VGS=4.5V
Super High Dense Cell Design
Reliable and Rugged
Lead Free and Green Devices Available
(RoHS Compliant)
Applications
Pin Description
Top View
D
GS
SOT-23
S
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
G
D
P Channel MOSFET
Ordering and Marking Information
AM3407
Packing
Package
Package
R : SOT23-3L
Packing
Blank : Tube
A : Taping
AM3407:
B7XXX
XXX - Date Code
Note: AXElite lead-free products contain molding compounds/die attach materials and 100% matte tin plate termina-
tion finish; which are fully compliant with RoHS. AXElite lead-free products meet or exceed the lead-free requirements
of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. AXElite defines “Green” to
mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
1
Axelite Confidential Materials, do not copy or distribute without written consent.
Rev. 1.0 Sep.06, 2010




AXElite

AM3407 Datasheet Preview

AM3407 Datasheet

P-Channel Enhancement Mode MOSFET

No Preview Available !

AM3407
Absolute
Maximum
Ratings
(T
A
=
25°C
unless
otherwise
noted)
Symbol
Parameter
VDSS
VGSS
ID*
IDM*
IS*
TJ
TSTG
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
300µs Pulsed Drain Current
Diode Continuous Forward Current
Maximum Junction Temperature
Storage Temperature Range
PD* Maximum Power Dissipation
RθJA* Thermal Resistance-Junction to Ambient
Note: *Surface Mounted on 1in2 pad area, t 5sec.
VGS=-10V
TA=25°C
TA=100°C
Rating
-30
±25
-4.5
-16
-1.8
150
-55 to 150
1.4
0.3
150
Unit
V
A
A
°C
W
°C/W
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
AM3407
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON) a Drain-Source On-state Resistance
VSDa Diode Forward Voltage
Gate Charge Characteristics b
VGS=0V, IDS=-250µA
VDS=-24V, VGS=0V
TJ=85°C
VDS=VGS, IDS=-250µA
VGS=±25V, VDS=0V
VGS=-10V, IDS=-4.5A
VGS=-4.5V, IDS=-3A
ISD=-1.8A, VGS=0V
-30
-
-
-1
-
-
-
-
--
- -1
- -30
-1.8 -2.5
- ±100
43 52
60 78
-0.8 -1.3
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=-15V, VGS=-10V,
IDS=-4.5A
- 13 18
-2-
-3-
Unit
V
µA
V
nA
m
V
nC
2
Axelite Confidential Materials, do not copy or distribute without written consent.
Rev. 1.0 Sep.06, 2010


Part Number AM3407
Description P-Channel Enhancement Mode MOSFET
Maker AXElite
PDF Download

AM3407 Datasheet PDF






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