RM24C256DS Overview
Adesto's EEPROM endurance can be as much as 40X higher than industry standard EEPROM devices operating in byte write mode at 85°C. Unlike EEPROMs based on floating gate technology (which require read-modify-write on a whole page for every write operation) CBRAM write endurance is based on the capability to write each byte individually, irrespective of whether the user writes single bytes or an entire page. Additionally, unlike floating gate technology, CBRAM does not experience any degradation of endurance across the full temperature range. By contrast, in order to modify a single byte, most EEPROMs modify and write full pages of 32, 64 or 128 bytes. This provides significantly less endurance for floating gate devices used in byte write mode when pared to page write mode. The Page Write operation of CBRAM is 4-6 times faster than the Page Write operation of similar EEPROM devices. Both...
RM24C256DS Key Features
- Memory array: 256Kbit non-volatile serial EEPROM memory
- Single supply voltage: 1.65V
- 2-wire I2C interface
- patible with I2C bus modes:
- 100kHz -400kHz -1MHz
- Page size: 64 bytes -Byte and Page Write from 1 to 64 bytes
- 128-byte, One-Time Programmable (OTP) Security Register
- 64 bytes factory programmed with a unique identifier
- 64 bytes user programmable
- Low Energy Byte Write -Byte Write consuming 50 nJ