NE21935 transistor equivalent, npn silicon hi frequncy transistor.
INCLUDE:
* High frequency 8.0 GH
* Low noise, 1 dB at 0.5 GHz.
MAXIMUM RATINGS:
IC VCBO VCEO VEBO PDISS TJ TSTG θJC 80 mA 20 V 10 V 1.5 V 580 mW @ TA = 25 °C -65.
up to 6.0 GHz.
PACKAGE STYLE .100 4L PILL
FEATURES INCLUDE:
* High frequency 8.0 GH
* Low noise, 1 dB at 0.5 G.
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