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ALD1101A - DUAL N-CHANNEL MATCHED MOSFET PAIR

Download the ALD1101A datasheet PDF. This datasheet also covers the ALD1101 variant, as both devices belong to the same dual n-channel matched mosfet pair family and are provided as variant models within a single manufacturer datasheet.

General Description

The ALD1101 is a monolithic dual N-channel matched transistor pair intended for a broad range of analog applications.

These enhancementmode transistors are manufactured with Advanced Linear Devices' enhanced ACMOS silicon gate CMOS process.

Key Features

  • Low threshold voltage of 0.7V.
  • Low input capacitance.
  • Low Vos grades -- 2mV, 5mV, 10mV.
  • High input impedance -- 1012Ω typical.
  • Negative current (IDS) temperature coefficient.
  • Enhancement-mode (normally off).
  • DC current gain 109.
  • RoHS compliant.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (ALD1101-AdvancedLinearDevices.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number ALD1101A
Manufacturer Advanced Linear Devices
File Size 65.87 KB
Description DUAL N-CHANNEL MATCHED MOSFET PAIR
Datasheet download datasheet ALD1101A Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
ADVANCED LINEAR DEVICES, INC. ALD1101A/ALD1101B ALD1101 DUAL N-CHANNEL MATCHED MOSFET PAIR GENERAL DESCRIPTION The ALD1101 is a monolithic dual N-channel matched transistor pair intended for a broad range of analog applications. These enhancementmode transistors are manufactured with Advanced Linear Devices' enhanced ACMOS silicon gate CMOS process. The ALD1101 offers high input impedance and negative current temperature coefficient. The transistor pair is matched for minimum offset voltage and differential thermal response, and it is designed for switching and amplifying applications in +2V to +10V systems where low input bias current, low input capacitance and fast switching speed are desired.