Description
ALD110804/ALD110904 are high precision monolithic quad/dual enhancement mode N-Channel MOSFETS matched at the factory using ALD’s proven EPAD® CMOS technology.
Features
- Enhancement-mode (normally off).
- Precision Gate Threshold Voltage of +0.40V.
- Matched MOSFET to MOSFET characteristics.
- Tight lot to lot parametric control.
- Low input capacitance.
- VGS(th) match (VOS) to 10mV.
- High input impedance.
- 1012Ω typical.
- Positive, zero, and negative VGS(th) temperature coefficient.
- DC current gain >108.
- Low input and output leakage currents.
ALD110804-AdvancedLinearDevices.pdf