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ALD110904 - QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD PRECISION MATCHED PAIR MOSFET ARRAY

Download the ALD110904 datasheet PDF. This datasheet also covers the ALD110804 variant, as both devices belong to the same quad/dual n-channel enhancement mode epad precision matched pair mosfet array family and are provided as variant models within a single manufacturer datasheet.

General Description

ALD110804/ALD110904 are high precision monolithic quad/dual enhancement mode N-Channel MOSFETS matched at the factory using ALD’s proven EPAD® CMOS technology.

These devices are intended for low voltage, small signal applications.

Key Features

  • Enhancement-mode (normally off).
  • Precision Gate Threshold Voltage of +0.40V.
  • Matched MOSFET to MOSFET characteristics.
  • Tight lot to lot parametric control.
  • Low input capacitance.
  • VGS(th) match (VOS) to 10mV.
  • High input impedance.
  • 1012Ω typical.
  • Positive, zero, and negative VGS(th) temperature coefficient.
  • DC current gain >108.
  • Low input and output leakage currents.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (ALD110804-AdvancedLinearDevices.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number ALD110904
Manufacturer Advanced Linear Devices
File Size 99.49 KB
Description QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD PRECISION MATCHED PAIR MOSFET ARRAY
Datasheet download datasheet ALD110904 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
ADVANCED LINEAR DEVICES, INC. ALD110804/ALD110904 QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD® VGS(th)= +0.40V PRECISION MATCHED PAIR MOSFET ARRAY APPLICATIONS • Ultra low power (nanowatt) analog and digital circuits • Ultra low operating voltage(<0.