datasheet4u.com

900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf





Advanced Linear Devices
Advanced Linear Devices

ALD114804 Datasheet Preview

ALD114804 Datasheet

(ALD114804 / ALD114904) QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD MATCHED PAIR MOSFET ARRAY

No Preview Available !

ALD114804 pdf
www.DataSheet4U.comADVANCED
LINEAR
DEVICES, INC.
e TM
EPAD
ENA
®
B
L
E
D
ALD114804/ALD114804A/ALD114904/ALD114904A
QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD®
MATCHED PAIR MOSFET ARRAY
VGS(th)= -0.4V
GENERAL DESCRIPTION
APPLICATIONS
ALD114804/ALD114804A/ALD114904/ALD114904A are monolithic quad/dual N-
Channel MOSFETS matched at the factory using ALD’s proven EPAD® CMOS
technology. These devices are intended for low voltage, small signal applica-
tions. They are excellent functional replacements for normally-closed relay appli-
cations, as they are normally on (conducting) without any power applied, but
could be turned off or modulated when system power supply is turned on. These
MOSFETS have the unique characteristics of, when the gate is grounded, oper-
ating in the resistance mode for low drain voltage levels and in the current source
mode for higher voltage levels and providing a constant drain current.
ALD114804/ALD114804A/ALD114904/ALD114904A MOSFETS are designed for
exceptional device electrical characteristics matching. As these devices are on
the same monolithic chip, they also exhibit excellent temperature tracking char-
acteristics. They are versatile as design components for a broad range of analog
applications, such as basic building blocks for current sources, differential ampli-
fier input stages, transmission gates, and multiplexer applications.
Besides matched pair electrical characteristics, each individual MOSFET also
exhibits well controlled parameters, enabling the user to depend on tight design
limits corresponding to well matched characteristics.
These depletion mode devices are built for minimum offset voltage and differen-
tial thermal response, and they are suitable for switching and amplifying applica-
tions in single supply (0.4V to + 5V ) or dual supply (+/- 0.4V to +/-5V) systems
where low input bias current, low input capacitance and fast switching speed are
desired. These devices exhibit well controlled turn-off and sub-threshold
charactersitics and therefore can be used in designs that depend on sub-thresh-
old characteristics.
The ALD114804/ALD114804A/ALD114904/ALD114904A are suitable for use in
precision applications which require very high current gain, beta, such as current
mirrors and current sources. A sample calculation of the DC current gain at a
drain current of 3mA and gate input leakage current of 30pA = 100,000,000. It is
recommended that the user, for most applications, connect V+ pin to the most
positive voltage potential (or left open unused) and V- and N/C pins to the most
negative voltage potential in the system. All other pins must have voltages within
these voltage limits.
FEATURES
• Depletion mode (normally ON)
• Precision Gate Threshold Voltages: -0.4V +/- 0.02V
• Nominal RDS(ON) @VGS=0.0V of 5.4K
• Matched MOSFET to MOSFET characteristics
• Tight lot to lot parametric control
• Low input capacitance
• VGS(th) match (VOS) — 20mV
• High input impedance — 1012typical
• Positive, zero, and negative VGS(th) temperature coefficient
• DC current gain >108
• Low input and output leakage currents
ORDERING INFORMATION
Operating Temperature Range*
0°C to +70°C
0°C to +70°C
• Functional replacement of Form B (NC) relays
• Ultra low power (nanowatt) analog and digital
circuits
• Ultra low operating voltage (<0.2V) analog and
digital circuits
• Sub-threshold biased and operated circuits
• Zero power fail safe circuits in alarm systems
• Backup battery circuits
• Power failure and fail safe detector
• Source followers and high impedance buffers
• Precision current mirrors and current sources
• Capacitives probes and sensor interfaces
• Charge detectors and charge integrators
• Differential amplifier input stage
• High side switches
• Peak detectors and level shifters
• Sample and Hold
• Current multipliers
• Discrete analog switches and multiplexers
• Discrete voltage comparators
PIN CONFIGURATION
ALD114804
V-
N/C* 1
GN1
DN1
S12
V-
DN4
GN4
N/C*
2
M1
3
4
5 V-
6 M4
7
8 V-
V-
16
15
M2
14
V+ 13
12
M 3 11
10
V- 9
N/C*
GN2
DN2
V+
S34
DN3
GN3
N/C*
PC, SC PACKAGES
ALD114904
V-
N/C* 1
V-
8 N/C*
GN1
DN1
S12
2
3
4
M1 M2
V-
7 GN2
6 DN2
5 V-
16-Pin
Plastic Dip
Package
16-Pin
SOIC
Package
8-Pin
Plastic Dip
Package
ALD114804APC ALD114804ASC ALD114904APA
ALD114804 PC ALD114804SC ALD114904PA
8-Pin
SOIC
Package
ALD114904ASA
ALD114904SA
PA, SA PACKAGES
*N/C pins are internally connected.
Connect to V- to reduce noise
* Contact factory for industrial temp. range or user-specified threshold voltage values
Rev 1.0-0506 ©2005 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286
www.aldinc.com



Advanced Linear Devices
Advanced Linear Devices

ALD114804 Datasheet Preview

ALD114804 Datasheet

(ALD114804 / ALD114904) QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD MATCHED PAIR MOSFET ARRAY

No Preview Available !

ALD114804 pdf
www.DaAtaBShSeOetL4UU.TcEomMAXIMUM RATINGS
Drain-Source voltage, VDS
Gate-Source voltage, VGS
Power dissipation
Operating temperature range PA, SA, PC, SC package
Storage temperature range
Lead temperature, 10 seconds
10.6V
10.6V
500 mW
0°C to +70°C
-65°C to +150°C
+260°C
OPERATING ELECTRICAL CHARACTERISTICS
V+ = +5V (or open) V- = -5V TA = 25°C unless otherwise specified
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
ALD114808A / ALD114908A ALD110848 / ALD114908
Parameter
Symbol
Min Typ
Max Min Typ
Max
Unit
Test Condition
Gate Threshold Voltage
Offset Voltage
VGS1-VGS2
VGS1-VGS2 Tempco
GateThreshold Tempco
On Drain Current
Forward Transconductance
Transconductance Mismatch
Output Conductance
Drain Source On Resistance
VGS(th)
VOS
-0.42 -0.40 -0.38 -0.44 -0.40 -0.36 V
25
7 20 mV
IDS =1µA
VDS = 0.1V
IDS =1µA
VOS
VGS(th)
IDS (ON)
GFS
GFS
GOS
RDS (ON)
5
-1.7
0.0
+1.6
12.0
3.0
1.4
1.8
68
500
5
-1.7
0.0
+1.6
12.0
3.0
1.4
1.8
68
500
µV/ °C VDS1 = VDS2
mV/ °C
ID = 1µA
ID = 20µA, VDS = 0.1V
ID = 40µA
mA VGS = +9.1V
VGS = +3.6V
VDS = +5V
mmho
VGS =+3.6 V
VDS = +8.6V
%
µmho
VGS =+3.6V
VDS = +8.6V
VDS = 0.1V
VGS = +3.6V
Drain Source On Resistance
Drain Source On Resistance
Tolerance
RDS (ON)
RDS (ON)
5.4
10
5.4 KVDS = 0.1V
VGS = +0.0V
10 %
Drain Source On Resistance
Mismatch
Drain Source Breakdown
Voltage
RDS (ON)
BVDSX
Drain Source Leakage Current1 IDS (OFF)
10
Gate Leakage Current1
IGSS
Input Capacitance
Transfer Reverse Capacitance
Turn-on Delay Time
Turn-off Delay Time
Crosstalk
CISS
CRSS
ton
toff
Notes: 1 Consists of junction leakage currents
ALD114804/ALD114804A/ALD114904/ALD114904A
0.5
10 100
4
3 30
1
2.5
0.1
10
10
60
0.5
10
10
3
2.5
0.1
10
10
60
%
V
100 pA
4 nA
30 pA
1 nA
pF
pF
ns
ns
dB
Advanced Linear Devices
IDS = 1.0µA
VGS = -1.4V
VGS = -1.4V, VDS =+5V
TA = 125°C
VDS = 0V VGS = +10V
TA =125°C
V+ = 5V RL= 5K
V+ = 5V RL= 5K
f = 100KHz
2


Part Number ALD114804
Description (ALD114804 / ALD114904) QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD MATCHED PAIR MOSFET ARRAY
Maker Advanced Linear Devices
Total Page 2 Pages
PDF Download
ALD114804 pdf
ALD114804 Datasheet PDF
[partsNo] view html
View PDF for Mobile








Similar Datasheet

1 ALD114804 (ALD114804 / ALD114904) QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD MATCHED PAIR MOSFET ARRAY Advanced Linear Devices
Advanced Linear Devices
ALD114804 pdf
2 ALD114804A (ALD114804 / ALD114904) QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD MATCHED PAIR MOSFET ARRAY Advanced Linear Devices
Advanced Linear Devices
ALD114804A pdf





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy