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ALD114835 Datasheet Preview

ALD114835 Datasheet

(ALD114835 / ALD114935) QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD MATCHED PAIR MOSFET ARRAYS

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ALD114835 pdf
ADVANCED
LINEAR
DEVICES, INC.
e TM
EPAD
ENA
®
B
L
E
D
ALD114835/ALD114935
QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD®
PRECISION MATCHED PAIR MOSFET ARRAY
VGS(th)= -3.50V
GENERAL DESCRIPTION
APPLICATIONS
ALD114835/ALD114935 are high precision monolithic quad/dual depletion mode
N-Channel MOSFETs matched at the factory using ALD’s proven EPAD CMOS
technology. These devices are intended for low voltage, small signal applica-
tions. They are excellent functional replacements for normally-closed relay ap-
plications, as they are normally on (conducting) without any power applied, but
could be turned off or modulated when system power supply is turned on. These
MOSFETs have the unique characteristics of, when the gate is grounded, oper-
ating in the resistance mode for low drain voltage levels and in the current
source mode for higher voltage levels and providing a constant drain current.
ALD114835/ALD114935 MOSFETs are designed for exceptional device elec-
trical characteristics matching. As these devices are on the same monolithic
chip, they also exhibit excellent temperature tracking characteristics. They are
versatile as design components for a broad range of analog applications such
as basic building blocks for current sources, differential amplifier input stages,
transmission gates, and multiplexer applications. Besides matched pair electri-
cal characteristics, each individual MOSFET also exhibits well controlled pa-
rameters, enabling the user to depend on tight design limits. Even units from
different batches and different date of manufacture have correspondingly well
matched characteristics.
These depletion mode devices are built for minimum offset voltage and differ-
ential thermal response, and they are designed for switching and amplifying
applications in single 5V to +/-5V systems where low input bias current, low
input capacitance and fast switching speed are desired. These devices exhibit
well controlled turn-off and sub-threshold charactersitics and therefore can be
used in designs that depend on sub-threshold characteristics.
The ALD114835/ALD114935 are suitable for use in precision applications which
require very high current gain, beta, such as current mirrors and current sources.
A sample calculation of the DC current gain at a drain current of 3mA and gate
input leakage current of 30pA = 100,000,000. It is recommended that the user,
for most applications, connect the V+ pin to the most positive voltage and the
V- and IC pins to the most negative voltage in the system. All other pins must
have voltages within these voltage limits at all times.
FEATURES
• Depletion mode (normally ON)
• Precision Gate Threshold Voltages: -3.50V +/- 0.05V
• Nominal RDS(ON) @VGS=0.0V of 540
• Matched MOSFET to MOSFET characteristics
• Tight lot to lot parametric control
• Low input capacitance
• VGS(th) match (VOS) — 20mV
• High input impedance — 1012typical
• Positive, zero, and negative VGS(th) temperature coefficient
• DC current gain >108
• Low input and output leakage currents
ORDERING INFORMATION (“L” suffix denotes lead-free (RoHS))
Operating Temperature Range*
0°C to +70°C
0°C to +70°C
• Functional replacement of Form B (NC) relay
• Zero power fail safe circuits
• Backup battery circuits
• Power failure detector
• Fail safe signal detector
• Source followers and buffers
• Precision current mirrors
• Precision current sources
• Capacitives probes
• Sensor interfaces
• Charge detectors
• Charge integrators
• Differential amplifier input stage
• High side switches
• Peak detectors
• Sample and Hold
• Alarm systems
• Current multipliers
• Analog switches
• Analog multiplexers
• Voltage comparators
• Level shifters
PIN CONFIGURATIONS
ALD114835
V-
IC* 1
GN1
DN1
S12
V-
2
3
4
5
M1
V-
DN4 6
GN4 7
M4
IC* 8 V-
V-
16 IC*
M2
V+
15 GN2
14 DN2
13 V+
12 S34
M 3 11 DN3
10 GN3
V- 9 IC*
SCL, PCL PACKAGES
ALD114935
V-
IC* 1
V-
8 IC*
GN1
DN1
S12
2
3
4
M1 M2
V-
7 GN2
6 DN2
5 V-
16-Pin
SOIC
Package
16-Pin
Plastic Dip
Package
8-Pin
SOIC
Package
8-Pin
Plastic Dip
Package
ALD114835SCL ALD114835PCL ALD114935SAL ALD114935PAL
SAL, PAL PACKAGES
*IC pins are internally connected,
connect to V-
* Contact factory for industrial temp. range or user-specified threshold voltage values
Rev 2.1 ©2012 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, CA 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286
www.aldinc.com



Advanced Linear Devices
Advanced Linear Devices

ALD114835 Datasheet Preview

ALD114835 Datasheet

(ALD114835 / ALD114935) QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD MATCHED PAIR MOSFET ARRAYS

No Preview Available !

ALD114835 pdf
ABSOLUTE MAXIMUM RATINGS
Drain-Source voltage, VDS
Gate-Source voltage, VGS
Power dissipation
10.6V
10.6V
500 mW
Operating temperature range SCL, PCL, SAL, PAL package
0°C to +70°C
Storage temperature range
-65°C to +150°C
Lead temperature, 10 seconds
+260°C
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
OPERATING ELECTRICAL CHARACTERISTICS
V+ = +5V V- = -5V TA = 25°C unless otherwise specified
ALD114835/ALD114935
Parameter
Gate Threshold Voltage
Offset Voltage
VGS(th)1-VGS(th)2
Offset VoltageTempco
GateThreshold Voltage Tempco
Symbol
VGS(th)
VOS
TCVOS
TCVGS(th)
On Drain Current
Forward Transconductance
IDS (ON)
GFS
Min
-3.55
Typ
-3.50
7
5
-1.7
0.0
+1.6
12.0
3.0
1.4
Max
-3.45
20
Transconductance Mismatch
Output Conductance
GFS
GOS
1.8
68
Drain Source On Resistance
RDS (ON)
540
Drain Source On Resistance
Tolerance
Drain Source On Resistance
Mismatch
Drain Source Breakdown
Voltage
Drain Source Leakage Current1
RDS (ON)
RDS (ON)
BVDSX
IDS (OFF)
Gate Leakage Current1
IGSS
Input Capacitance
Transfer Reverse Capacitance
Turn-on Delay Time
Turn-off Delay Time
Crosstalk
CISS
CRSS
ton
toff
10
5
0.5
10
3
2.5
0.1
10
10
60
400
4
200
1
Unit
V
mV
Test Conditions
IDS = 1µA, VDS = 0.1V
µV/ °C
mV/ °C
VDS1 = VDS2
ID = 1µA, VDS = 0.1V
ID = 20µA, VDS = 0.1V
ID = 40µA, VDS = 0.1V
mA VGS = +6.0V, VDS = +5V
VGS = +0.5V, VDS = +5V
mmho
VGS = +0.5V
VDS = +5.5V
%
µmho
VGS = +0.5V
VDS = +5.5V
VDS = 0.1V
VGS = +0.0V
%
%
V IDS = 1.0µA
VGS = -4.5V
pA VGS = -4.5V, VDS =+5V
nA TA = 125°C
pA VDS = 0V, VGS = 5V
nA TA =125°C
pF
pF
ns V+ = 5V, RL= 5K
ns V+ = 5V, RL= 5K
dB f = 100KHz
Notes: 1 Consists of junction leakage currents
ALD114835/ALD114935
Advanced Linear Devices
2 of 11


Part Number ALD114835
Description (ALD114835 / ALD114935) QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD MATCHED PAIR MOSFET ARRAYS
Maker Advanced Linear Devices
Total Page 11 Pages
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