Datasheet4U Logo Datasheet4U.com

ALD114835 - QUAD/DUAL N-CHANNEL MOSFET ARRAY

General Description

ALD114835/ALD114935 are high precision monolithic quad/dual depletion mode N-Channel MOSFETs matched at the factory using ALD’s proven EPAD CMOS technology.

These devices are intended for low voltage, small signal applications.

Key Features

  • Depletion mode (normally ON).
  • Precision Gate Threshold Voltages: -3.50V +/- 0.05V.
  • Nominal RDS(ON) @ VGS = 0.0V of 540Ω.
  • Matched MOSFET-to-MOSFET characteristics.
  • Tight lot-to-lot parametric control.
  • Low input capacitance.
  • VGS(th) match (VOS).
  • 20mV.
  • High input impedance.
  • 1012Ω typical.
  • Positive, zero, and negative VGS(th) temperature coefficient.
  • DC current gain >108.
  • Low input.

📥 Download Datasheet

Datasheet Details

Part number ALD114835
Manufacturer Advanced Linear Devices
File Size 106.42 KB
Description QUAD/DUAL N-CHANNEL MOSFET ARRAY
Datasheet download datasheet ALD114835 Datasheet

Full PDF Text Transcription for ALD114835 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for ALD114835. For precise diagrams, and layout, please refer to the original PDF.

ADVANCED LINEAR DEVICES, INC. e TM EPAD ® ENAB L E D ALD114835/ALD114935 QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD® PRECISION MATCHED PAIR MOSFET ARRAY VGS(th)= -3.50V GENE...

View more extracted text
ON MODE EPAD® PRECISION MATCHED PAIR MOSFET ARRAY VGS(th)= -3.50V GENERAL DESCRIPTION APPLICATIONS ALD114835/ALD114935 are high precision monolithic quad/dual depletion mode N-Channel MOSFETs matched at the factory using ALD’s proven EPAD CMOS technology. These devices are intended for low voltage, small signal applications. They are excellent functional replacements for normally-closed relay applications, as they are normally on (conducting) without any power applied, but could be turned off or modulated when system power supply is turned on.