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PDU-G101A Datasheet UV Enhanced GaN Detectors

Manufacturer: Advanced Photonix

Overview: UV Enhanced GaN Detectors www.DataSheet4U.com Advanced Photonix, Inc. PACKAGE DIMENSIONS INCH [mm] Ø.210 [5.35] PDU-G101A .055 [1.40] 2X Ø.017 [0.43] CATHODE VIEWING ANGLE 61° Ø .118 [3.00] ANODE .100 [2.54] Ø.181 [4.60] CHIP .087 [2.21] .500 [12.70] CHIP DIMENSIONS INCH [mm] .016 [0.40] SQ .0134 [0.340] TO-46 PACKAGE .0126 [0.320] ACTIVE AREA = 0.

Datasheet Details

Part number PDU-G101A
Manufacturer Advanced Photonix
File Size 120.25 KB
Description UV Enhanced GaN Detectors
Download PDU-G101A Download (PDF)

General Description

The PDU-G101A is a GaN UV photodiode with a spectral range from 200nm to 365nm and is ideal for UVB sensing applications available in a TO-46 can package.

1.000 APPLICATIONS • • • • UVB power meters Sun dosimeters UV epoxy curing UV instrumentation ABSOLUTE MAXIMUM RATING (TA)= 23°C UNLESS OTHERWISE NOTED SYMBOL VBR TSTG TO TS PARAMETER Reverse Voltage Storage Temperature Operating Temperature Soldering Temperature* -40 -30 MIN MAX 5 +90 +85 +260 UNITS V °C °C °C Responsivity (A/W) 0.100 SPECTRAL RESPONSE 0.010 0.001 * 1/16 inch from case for 3 seconds max.

0.000 230 240 250 260 270 280 290 300 310 320 330 340 350 360 370 380 390 Wavelength (nm) ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23°C UNLESS OTHERWISE NOTED SYMBOL ISC ID RSH CJ lrange R VBR NEP tr CHARACTERISTIC Short Circuit Current Dark Current Shunt Resistance Junction Capacitance Spectral Application Range Responsivity Breakdown Voltage Noise Equivalent Power Response Time TEST CONDITIONS UVI = 1 VR = 1V VR = 10 mV VR = 0V, f = 1 MHz Spot Scan l= 350nm V, VR = 0 V I = 1 μA VR = 10V @ l=Peak RL = 1KΩ,VR = 1V MIN TYP 1 0.05 1 24 0.10 10 1X10-13 10 MAX 1 UNITS nA nA GW pF nm A/W V W/ √ Hz nS 0.45 200 365 15 © 2007 Advanced Photonix, Inc.

Key Features

  • 365nm UVB response Visible & NIR blind Photovoltaic operation High shunt resistance.