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PDU-G106B-SM Datasheet UV Enhanced GaN Detectors

Manufacturer: Advanced Photonix

Overview: UV Enhanced GaN Detectors www.DataSheet4U.com PDU-G106B-SM PACKAGE DIMENSIONS inch [mm] .095 [2.43] .020 [0.50] 45° .032 [0.80] .138 [3.50] .126 [3.20] Ø.095 [2.40] .075 [1.90] .032 [0.80] QUARTZ WINDOW .034 [0.85] .091 [2.30] .058 [1.48] .016 [0.40] SQ ANODE Ø.039 [Ø1.00] .110 [2.80] .083 [2.10] CATHODE .051 [1.30] .067 [1.70] .169 [4.30] .0134 [0.340] .0126 [0.

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Datasheet Details

Part number PDU-G106B-SM
Manufacturer Advanced Photonix
File Size 69.86 KB
Description UV Enhanced GaN Detectors
Download PDU-G106B-SM Download (PDF)

General Description

The PDU-G106B-SM is a GaN UV photodiode with a spectral range from 200nm to 320nm and is ideal for UVB sensing applications available in an SMD package.

1.0000 APPLICATIONS • • • • UVB power meters Sun dosimeters UV epoxy curing UV instrumentation ABSOLUTE MAXIMUM RATING (TA)= 23°C UNLESS OTHERWISE NOTED SYMBOL VBR TSTG TO TS PARAMETER Reverse Voltage Storage Temperature Operating Temperature Soldering Temperature* -40 -30 MIN MAX 5 +90 +85 +260 UNITS °C °C °C Responsivity (A/W) SPECTRAL RESPONSE 0.1000 0.0100 V 0.0010 0.0001 * 1/16 inch from case for 3 seconds max.

0.0000 230 240 250 260 270 280 290 300 310 320 330 340 350 360 370 380 390 400 Wavelength (nm) ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23°C UNLESS OTHERWISE NOTED SYMBOL ISC ID RSH CJ lrange R VBR tr CHARACTERISTIC Short Circuit Current Dark Current Shunt Resistance Junction Capacitance Spectral Application Range Responsivity Breakdown Voltage Response Time** TEST CONDITIONS UVI = 1 VR = 1V VR = 10 mV VR = 0V, f = 1 MHz Spot Scan l= 350nm V, VR = 0 V I = 1μA RL = 1KΩ,VR = 1V MIN TYP 1 50 1 24 0.10 10 10 MAX 100 UNITS nA μA GW pF nm A/W V nS 0.45 200 320 15 **Response time of 10% to 90% is specified at 660nm wavelength light.

Key Features

  • 320nm UVB response Visible & NIR blind Photovoltaic operation High shunt resistance.

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