Datasheet Details
| Part number | 3310GH |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 303.32 KB |
| Description | AP3310GH |
| Download | 3310GH Download (PDF) |
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| Part number | 3310GH |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 303.32 KB |
| Description | AP3310GH |
| Download | 3310GH Download (PDF) |
|
|
|
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and costeffectiveness.
This device is suited for low voltage and battery power applications.
G G D S TO-252(H) D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating - 20 +12 -10 -6.2 -24 25 0.01 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 5.0 110 Units ℃/W ℃/W Data and specifications subject to change without notice 1 200808155 AP3310GH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Drain-Source Leakage Current (Tj=150 C) o Test Conditions VGS=0V, ID=-250uA VGS=-4.5V, ID=-2.8A VGS=-2.5V, ID=-2.0A VDS=VGS, ID=-250uA VDS=-5V, ID=-2.8A VDS=-20V, VGS=0V VDS=-16V, VGS=0V VGS=+12V ID=-2.8A VDS=-6V VGS=-5V VDS=-6V ID=-1A RG=6Ω,VGS=-5V RD=6Ω VGS=0V VDS=-6V f=1.0MHz Min.
AP3310GH/J RoHS-compliant Product Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ 2.5V Gate Drive Capability www.DataSheet4U.
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