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Advanced Power Electronics

3310GH Datasheet Preview

3310GH Datasheet

AP3310GH

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Advanced Power
Electronics Corp.
AP3310GH/J
RoHS-compliant Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
2.5V Gate Drive Capability
www.DataSheet4U.cFomast Switching Characteristic
Description
G
D
S
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, low on-resistance and cost-
effectiveness.
This device is suited for low voltage and battery power applications.
BVDSS
RDS(ON)
ID
-20V
150mΩ
-10A
GD
S TO-252(H)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
ID@TC=100
IDM
PD@TC=25
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
G
D
S
TO-251(J)
Rating
- 20
+12
-10
-6.2
-24
25
0.01
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
Value
5.0
110
Units
/W
/W
Data and specifications subject to change without notice
1
200808155




Advanced Power Electronics

3310GH Datasheet Preview

3310GH Datasheet

AP3310GH

No Preview Available !

AP3310GH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
www.DataSheet4U.com
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=-1mA
Static Drain-Source On-Resistance VGS=-4.5V, ID=-2.8A
VGS=-2.5V, ID=-2.0A
Gate Threshold Voltage
Forward Transconductance
VDS=VGS, ID=-250uA
VDS=-5V, ID=-2.8A
Drain-Source Leakage Current
Drain-Source Leakage Current (Tj=150oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
VDS=-20V, VGS=0V
VDS=-16V, VGS=0V
VGS=+12V
ID=-2.8A
VDS=-6V
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
VGS=-5V
VDS=-6V
Rise Time
Turn-off Delay Time
ID=-1A
RG=6Ω,VGS=-5V
Fall Time
RD=6Ω
Input Capacitance
Output Capacitance
VGS=0V
VDS=-6V
Reverse Transfer Capacitance
f=1.0MHz
-20 - - V
- -0.1 - V/
- - 150 m
- - 250 m
-0.5 - - V
- 4.4 - S
- - -1 uA
- - -25 uA
- - +100 nA
- 6 - nC
- 1.5 - nC
- 0.6 - nC
- 25 - ns
- 60 - ns
- 70 - ns
- 60 -
- 300 -
- 180 -
ns
pF
pF
- 60 - pF
Source-Drain Diode
Symbol
Parameter
IS Continuous Source Current ( Body Diode )
ISM Pulsed Source Current ( Body Diode )1
VSD Forward On Voltage2
Test Conditions
VD=VG=0V , VS=-1.2V
Tj=25, IS=-10A, VGS=0V
Min. Typ. Max. Units
- - -10 A
- - -24 A
- - -1.2 V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2


Part Number 3310GH
Description AP3310GH
Maker Advanced Power Electronics
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