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40P03GI Datasheet AP40P03GI

Manufacturer: Advanced Power Electronics Corp

Overview: Advanced Power Electronics Corp. AP40P03GI RoHS-compliant Product P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower On-resistance D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant G.

General Description

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220CFM isolation package is widely preferred for all commercial-industrial through hole applications.

BVDSS RDS(ON) ID -30V 28mΩ -30A G D S TO-220CFM(I) Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor TSTG TJ Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Rating -30 +20 -30 -18 -120 31.3 0.25 -55 to 150 -55 to 150 Value 4 65 Units V V A A A W W/℃ ℃ ℃ Units ℃/W ℃/W Data and specifications subject to change without notice 1 200812303 AP40P03GI Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min.

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