Datasheet Details
| Part number | 4501GSD |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 158.76 KB |
| Description | AP4501GSD |
| Datasheet | 4501GSD_AdvancedPowerElectronics.pdf |
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Overview: .DataSheet.co.kr AP4501GSD Pb Free Plating Product Advanced Power Electronics Corp.
| Part number | 4501GSD |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 158.76 KB |
| Description | AP4501GSD |
| Datasheet | 4501GSD_AdvancedPowerElectronics.pdf |
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The Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and costeffectiveness.
G1 G2 S1 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating N-channel 30 ±20 7 5.8 40 2 0.016 -55 to 150 -55 to 150 P-channel -30 ±20 -5 -4.2 -30 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max.
62.5 Unit ℃/W Data and specifications subject to change without notice 200504042 Datasheet pdf - http://..net/ .DataSheet.co.kr AP4501GSD N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=250uA Min.
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