4525GEH Description
Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. o Symbol Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=250uA Min. Units 1.8 V ns nC Reverse Recovery Time Reverse Recovery Charge 2 AP4525GEH.