60T03GP Datasheet | Advanced Power Electronics Corp

Description Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is widely preferred for all mercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP60T03GP) are available for low-profile applications. TO-263(S) TO-220(P) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Rating 30 +20 45 32 120 44 0.352 -55 to 175 -55 to 175 Units V V A A A W W/℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 3.4 62 Units ℃/W ℃/W Data and specifications subject to change without notice 1 200809253 Free Datasheet http://../ AP60T03GS/P Electrical Characteristics@Tj=25o C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=250u A Min. 30 1 Typ. 0.03 25 11.6 3.9 7 8.8 57.5 18.5 6.4 200 135 Max. Units 12 25 3 1 250 +100 19 V V/℃ mΩ mΩ V S u A u A n A n C n C n C ns ns ns ns p F p F p F Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1m A VGS=10V, ID=20A VGS=4.5V, ID=15A VDS=VGS, ID=250u A Gate Threshold Voltage Forward Transconductance VDS=10V, ID=10A VDS=30V, VGS=0V o Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge Drain-Source Leakage Current (T j=175 C) VDS=24V ,VGS=0V VGS= +20V ID=20A VDS=24V VGS=4.5V VDS=15V ID=20A RG=3.3Ω,VGS=10V RD=0.75Ω VGS=0V VDS=25V f=1.0MHz Gate-Source...