| Description | The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G D S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=125℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain... |
| Features |
2.6 110 Unit ℃/W ℃/W
Data and specifications subject to change without notice
200227032
Free Datasheet http://www.datasheetlist.com/
AP9918H/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=250uA
Min. 20 0.5 -
Typ. 0.1 26 19 1.5 10.5 ...
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| Datasheet |
 9918H Datasheet - 104.80KB |
