| Description | Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. D1 D2 G1 S1 G2 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS @ 10V Continuous Drain Current , VGS @ ... |
| Features |
bject to change without notice
1 200809223
AP9971GD
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current
o
Test Conditions VGS=0V, ID=250uA VGS=10V, ID=5A VGS=...
|
| Datasheet |
 9971GD Datasheet - 168.30KB |
