| Description | Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G1 D1 G2 S1 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ www.DataSheet4U.com Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS @ 10V Continuous Drain Current , VGS @ 10V Pulsed Drain ... |
| Features |
℃/W
Data and specifications subject to change without notice
1 200811042
AP9971GM
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current
o
Test Conditions VGS=...
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| Datasheet |
 9971GM Datasheet - 240.27KB |
