9971GM Overview
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G1 D1 G2 S1 S2 Symbol VDS VGS ID@TA=25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS @ 10V Continuous Drain Current , VGS @ 10V Pulsed Drain Current 1,2 3 Rating 60 +25 5 3.2 30 2 0.016 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ ID@TA=100℃ IDM PD@TA=25℃ TSTG TJ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum 3 Value 62.5 Unit ℃/W Data and specifications subject to change without notice 1 200811042 AP9971GM Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current o Test Conditions VGS=0V, ID=250uA VGS=10V, ID=5A VGS=4.5V, ID=2.5A VDS=VGS, ID=250uA VDS=10V, ID=5A VDS=60V, VGS=0V VGS= +25V ID=5A VDS=48V VGS=10V VDS=30V ID=5A RG=3.3Ω,VGS=10V RD=6Ω VGS=0V VDS=25V f=1.0MHz Min.
