| Description | The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G D S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 4.5V Continuous Drai... |
| Features |
stance Junction-ambient Max. Max. Value 5 110 Units ℃/W ℃/W
Data and specifications subject to change without notice
200908052-1/4
www.DataSheet4U.com
AP9T16GH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS ΔBVDSS/ΔTj RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Drain-...
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| Datasheet |
 9T16GH Datasheet - 141.21KB |
