Datasheet Details
| Part number | AP02N40J |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 174.14 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet |
 AP02N40J Datasheet
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| Part number | AP02N40J |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 174.14 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet |
AP02N40J Datasheet
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AP02N40 uses rugged design with the best combination of fast switching and cost-effectiveness.
The TO-251 package is widely preferred for commercial-industrial through-hole applications.
G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 400 +30 1.6 1 3 33 2 Units V V A A A W mJ A ℃ ℃ Total Power Dissipation Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range 5 1 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 3.8 110 Unit ℃/W ℃/W Data & specifications subject to change without notice 1 200811191 Downloaded from Elcodis.com electronic components distributor AP02N40J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge 3 3 Test Conditions VGS=0V, ID=1mA VGS=10V, ID=1A VDS=VGS, ID=250uA VDS=10V, ID=1A VDS=400V, VGS=0V VGS=+30V ID=1A VDS=320V VGS=10V VDD=200V ID=1A RG=50Ω,VGS=10V RD=200Ω VGS=0V VDS=25V f=1.0MHz Min.
AP02N40J RoHS-compliant Product Advanced Power Electronics Corp.
▼ 100% Avalanche Test ▼ Fast Switching Characteristic ▼ Simple Drive Requirement G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 400V 5Ω 1.
| Part Number | Description |
|---|---|
| AP02N40J | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP02N40J-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP02N40J-HF-3 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP02N40H | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP02N40H-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP02N40H-HF-3 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP02N40I-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP02N40K-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP02N40P | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP02N60H | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |