Datasheet Details
| Part number | AP02N60H-H |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 239.79 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet |
 AP02N60H-H Datasheet
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| Part number | AP02N60H-H |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 239.79 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet |
AP02N60H-H Datasheet
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G D The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for AC/DC converters.
The through-hole version (AP02N60J-H) is available for low-profile applications.
G D S S TO-252(H) TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR EAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 700 +30 1.4 0.9 5.6 39 0.31 2 Units V V A A A W W/ ℃ mJ A mJ ℃ ℃ Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Storage Temperature Range Operating Junction Temperature Range 49 1.4 0.5 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 4 Value 3.2 62.5 110 Units ℃/W ℃/W ℃/W Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice 1 200807222 AP02N60H/J-H Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj o Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Drain-Source Leakage Current (Tj=150oC) Test Conditions VGS=0V, ID=10mA VGS=10V, ID=0.6A VDS=VGS, ID=250uA VDS=10V, ID=1A VDS=600V, VGS=0V VDS=480V, VGS=0V VGS=+30V ID=1.4A VDS=480V VGS=10V VDD=300V ID=1.4A RG=10Ω,VGS=10V RD=214Ω VGS=0V VDS=25V f=1.0MHz Min.
AP02N60H/J-H RoHS-compliant Product Advanced Power Electronics Corp.
▼ 100% Avalanche Test ▼ Lower Gate Charge ▼ Fast Switching Characteristic ▼ Simple Drive Requirement G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 700V 8.8Ω 1.
| Part Number | Description |
|---|---|
| AP02N60H-H-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP02N60H-H-HF-3 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP02N60H-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP02N60H-HF-3 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP02N60H | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP02N60I | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP02N60I-A-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP02N60I-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP02N60J | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP02N60J-H | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |