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AP02N90H Datasheet N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Manufacturer: Advanced Power Electronics Corp

General Description

S G D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-252 package is universally preferred for all commercialindustrial applications at power dissipation levels to approximately 50 watts.

The through-hole version (AP02N90J) is available for lowprofile applications.

Overview

www.DataSheet4U.com AP02N90H/J Pb Free Plating Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics Corp.

¡¿ ¡¿ ¡¿ Simple Drive Requirement Low On-resistance Fast Switching Characteristics G D BVDSS RDS(ON) ID 900V 7.2£[ 1.