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AP04N70BI - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

General Description

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220CFM isolation package is universally preferred for all commercial-industrial through hole applications.

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Other Datasheets by Advanced Power Electronics Corp

Part Number Description
AP04N70BI-A N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP04N70BI-A-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP04N70BI-H N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP04N70BI-H-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP04N70BI-H-HF-3 N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AP04N70BI RoHS-compliant Product Advanced Power Electronics Corp. ▼ 100% Avalanche Test ▼ Fast Switching Characteristic ▼ Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 600V 2.4Ω 4A G S Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220CFM isolation package is universally preferred for all commercial-industrial through hole applications.