▼ High Speed Switching
▼ Low Saturation Voltage
VCE(sat)=2.3V@IC=5A ▼ CO-PAK, IGBT With FRD ▼ RoHS Compliant & Halogen-Free
G C E
TO-3P
Absolute Maximum Ratings
Symbol
Parameter
VCES VGE IC@TC=25℃ IC@TC=100℃ ICM IF@TC=100℃ IFM PD@TC=25℃ TSTG TJ TL
Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current1 Diode Forward Current Diode Pulse Forward Current Maximum Power Dissipation Storage Temperature Range Operating Junction Temperature Ran.
Full PDF Text Transcription for AP05G120SW-HF (Reference)
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AP05G120SW-HF. For precise diagrams, and layout, please refer to the original PDF.
Advanced Power Electronics Corp. AP05G120SW-HF Halogen-Free Product N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD. Features ▼ High Speed Switching ▼ Low Saturation...
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TRANSISTOR WITH FRD. Features ▼ High Speed Switching ▼ Low Saturation Voltage VCE(sat)=2.3V@IC=5A ▼ CO-PAK, IGBT With FRD ▼ RoHS Compliant & Halogen-Free G C E TO-3P Absolute Maximum Ratings Symbol Parameter VCES VGE IC@TC=25℃ IC@TC=100℃ ICM IF@TC=100℃ IFM PD@TC=25℃ TSTG TJ TL Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current1 Diode Forward Current Diode Pulse Forward Current Maximum Power Dissipation Storage Temperature Range Operating Junction Temperature Range Maximum Lead Temp. for Soldering Purposes , 1/8" from case for 5 seconds . VCES IC G Rating 1200 +30 21
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AP05G120SW-HF Datasheet
