AP05N50H-3 mosfet equivalent, n-channel enhancement mode power mosfet.
G D S
TO-252(H)
Absolute Maximum Ratings
Symbol VDS VGS ID at TC =25°C ID at TC=100°C IDM PD at TC=25°C EAS IAR TSTG .
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP05N50H-3 provides high blocking voltage to overcome voltage surge and sag in the toughest power systems.
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