Datasheet Details
| Part number | AP05N50H |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 170.01 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet |
 AP05N50H Datasheet
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| Part number | AP05N50H |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 170.01 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet |
AP05N50H Datasheet
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The AP05N50 provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching,ruggedized design and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications.
GD S TO-252(H) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 500 ±20 5.0 2.8 18 73.5 0.59 45 3 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ mJ A ℃ ℃ Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy2 Avalanche Current Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 1.7 110 Unit ℃/W ℃/W 1 200801251 Data & specifications subject to change without notice Downloaded from Elcodis.com electronic components distributor AP05N50H Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Drain-Source Leakage Current (Tj=125oC) Test Conditions VGS=0V, ID=1mA VGS=10V, ID=2.7A VDS=VGS, ID=250uA VDS=10V, ID=2.7A VDS=500V, VGS=0V VDS=400V, VGS=0V VGS=±20V ID=3.1A VDS=400V VGS=10V VDD=250V ID=3.1A RG=12Ω,VGS=10V RD=80.6Ω VGS=0V VDS=25V f=1.0MHz f=1.0MHz Min.
AP05N50H RoHS-compliant Product Advanced Power Electronics Corp.
▼ 100% Avalanche Test ▼ Fast Switching Characteristic ▼ Simple Drive Requirement G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 500V 1.4Ω 5.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AP05N50I | N-Channel 650V Power MOSFET | VBsemi |
| Part Number | Description |
|---|---|
| AP05N50H-3 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP05N50H-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP05N50EH-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP05N50EH-HF-3 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP05N50EI-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP05N50EJ-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP05N50EJ-HF-3 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP05N50I | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP05N50I-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP05N50IB-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |