AP06P20GJ-HF mosfet equivalent, p-channel enhancement mode power mosfet.
and suited for low voltage applications.
BVDSS RDS(ON) ID
-200V 1.4Ω -4.7A
G D S
TO-251(J)
Absolute Maximum Ratings.
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness.
The TO-251 package is widely preferred for all commercial-industrial through-hole a.
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