Datasheet Details
| Part number | AP0803GMP-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 94.03 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet |
 AP0803GMP-HF Datasheet
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| Part number | AP0803GMP-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 94.03 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet |
AP0803GMP-HF Datasheet
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Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, □ ruggedized device design, low on-resistance and cost-effectiveness.
The EFSOP-8 (Exposed pad SO-8) package is widely preferred for commercial-industrial surface mount applications and exposed backside design is compatible with PMPAK® 5x6.
D D D D D G EFSOP-8 S S S Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TA=25℃ ID@TA=70℃ IDM PD@TC=25℃ PD@TA=25℃ EAS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 30 +20 44 18.2 14.6 160 29.7 5 4 Units V V A A A A W W mJ ℃ ℃ Total Power Dissipation Total Power Dissipation Single Pulse Avalanche Energy Storage Temperature Range Operating Junction Temperature Range 16.2 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient 3 Value 4.2 25 Units ℃/W ℃/W Data & specifications subject to change without notice 1 201103281 AP0803GMP-HF Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Conditions VGS=0V, ID=250uA VGS=10V, ID=20A VGS=4.5V, ID=20A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS=VGS, ID=250uA VDS=10V, ID=20A VDS
AP0803GMP-HF Halogen-Free Product Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Low On-resistance ▼ RoHS Compliant & Halogen-Free G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 30V 9.
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